Product Information

MT47H64M16NF-25E XIT:M

MT47H64M16NF-25E XIT:M electronic component of Micron

Datasheet
DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 7.0379 ea
Line Total: USD 14.08

1125 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
1125 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2
Multiples : 1
2 : USD 7.0379
10 : USD 6.7349
25 : USD 6.5547
50 : USD 6.2817
100 : USD 5.3126
1000 : USD 5.2771

     
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1Gb: x4, x8, x16 DDR2 SDRAM Addendum Features DDR2 SDRAM Data Sheet Addendum MT47H256M4 32 Meg x 4 x 8 banks MT47H128M8 16 Meg x 8 x 8 banks MT47H64M16 8 Meg x 16 x 8 banks 1 Options Marking Features Configuration This data sheet addendum provides information to 256 Meg x 4 (32 Meg x 4 x 8 banks) 256M4 add the X option indicating the Product Longevity 128 Meg x 8 (16 Meg x 8 x 8 banks) 128M8 Program for data sheet MT47H64M16NF-25E. This ad- 64 Meg x 16 (8 Meg x 16 x 8 banks) 64M16 dendum does not provide detailed information about FBGA package (Pb-free) x16 the device. Refer to the general market data sheet for a 84-ball FBGA (8mm x 12.5mm) Die HR complete description of device functionality, operat- Rev :H ing modes, and specifications. 84-ball FBGA (8mm x 12.5mm) Die NF Rev :M V = 1.8V 0.1V, V = 1.8V 0.1V DD DDQ FBGA package (Pb-free) x4, x8 JEDEC-standard 1.8V I/O (SSTL 18-compatible) 60-ball FBGA (8mm x 10mm) Die CF Differential data strobe (DQS, DQS ) option Rev :H 60-ball FBGA (8mm x 10mm) Die SH 4n-bit prefetch architecture Rev :M Duplicate output strobe (RDQS) option for x8 FBGA package (lead solder) x16 DLL to align DQ and DQS transitions with CK 84-ball FBGA (8mm x 12.5mm) Die HW 8 internal banks for concurrent operation Rev :H Programmable CAS latency (CL) FBGA package (lead solder) x4, x8 Posted CAS additive latency (AL) 60-ball FBGA (8mm x 10mm) Die JN t Rev :H WRITE latency = READ latency - 1 CK Timing cycle time Selectable burst lengths (BL): 4 or 8 1.875ns CL = 7 (DDR2-1066) -187E Adjustable data-output drive strength 2.5ns CL = 5 (DDR2-800) -25E 64ms, 8192-cycle refresh 3.0ns CL = 5 (DDR2-667) -3 On-die termination (ODT) Self refresh Industrial temperature (IT) option Standard None Low-power L Automotive temperature (AT) option Special options RoHS-compliant Product Longevity Program (PLP) X Supports JEDEC clock jitter specification Operating temperature 2 Commercial (0C T +85C) None C Industrial (40C T +95C IT C 40C T +85C) A Revision :H / :M 1. Not all options listed can be combined to Notes: define an offered product. Use the Part Catalog Search on www.micron.com for product offerings and availability. 2. For extended CT operating temperature see the product data sheet. PDF: 09005aef85a5c357 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 1gb u68a u88b ddr2 addendum.pdf Rev. A 9/14 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1Gb: x4, x8, x16 DDR2 SDRAM Addendum Features Table 1: Key Timing Parameters Data Rate (MT/s) t Speed Grade CL = 3 CL = 4 CL = 5 CL = 6 CL = 7 RC (ns) -187E 400 533 800 800 1066 54 -25E 400 533 800 800 n/a 55 -3 400 533 667 n/a n/a 55 Table 2: Addressing Parameter 256 Meg x 4 128 Meg x 8 64 Meg x 16 Configuration 32 Meg x 4 x 8 banks 16 Meg x 8 x 8 banks 8 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row address A 13:0 (16K) A 13:0 (16K) A 12:0 (8K) Bank address BA 2:0 (8) BA 2:0 (8) BA 2:0 (8) Column address A 11, 9:0 (2K) A 9:0 (1K) A 9:0 (1K) Figure 1: 1Gb DDR2 Part Numbers Example Part Number: MT47H128M8SH-25E:M - : MT47H Configuration Package Speed Revision :H/:M Revision Configuration 256 Meg x 4 256M4 L Low power 128 Meg x 8 128M8 64 Meg x 16 64M16 IT Industrial temperature Package Special options Pb-free Product Longevity Program (PLP) X 84-ball 8mm x 12.5mm FBGA HR 60-ball 8mm x 10.0mm FBGA CF Speed Grade t NF 84-ball 8mm x 12.5mm FBGA -187E CK = 1.875ns, CL = 7 t 60-ball 8mm x 10.0mm FBGA SH -25E CK = 2.5ns, CL = 5 t Lead solder -3 CK = 3ns, CL = 5 84-ball 8mm x 12.5mm FBGA HW 60-ball 8mm x 10mm FBGA JN 1. Not all speeds and configurations are available in all packages. Note: FBGA Part Number System Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Microns Web site:

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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