MMD60R360PBRH

MMD60R360PB Datasheet MMD60R360PB 600V 0.38 N-channel MOSFET Description MMD60R360PB is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. Key Parameters Package & Internal Circuit D Parameter Value Unit V @ T 650 V DS j,max R 0.38 DS(on),max V 3 V TH,typ G I 11 A D TO-252 G Q 28 nC g,typ D (DPAK) S S Features Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package Pb Free Plating, Halogen Free Applications PFC Power Supply Stages Switching Applications Adapter Motor Control DC DC Converters Ordering Information Order Code Marking Temp. Range Package Packing RoHS Status MMD60R360PBRH 60R360P -55 ~ 150 TO-252 (DPAK) Reel Halogen Free 1 Jul. 2014 Revision 1.0 MagnaChip Semiconductor Ltd. MMD60R360PB Datasheet Absolute Maximum Rating (T =25 unless otherwise specified) c Parameter Symbol Rating Unit Note Drain Source voltage V 600 V DSS Gate Source voltage V 30 V GSS 11 A T =25 C Continuous drain current I D 6.95 A T =100 C (1) Pulsed drain current I 33 A DM Power dissipation P 83 W D Single - pulse avalanche energy E 220 mJ AS MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness dv/dt 15 V/ns Storage temperature T -55 ~150 stg Maximum operating junction T 150 j temperature 1) Pulse width t limited by T P j,max 2) I I , V V SD D DS peak (BR)DSS Thermal Characteristics Parameter Symbol Value Unit Thermal resistance, junction-case max R 1.5 /W thjc Thermal resistance, junction-ambient max R 62.5 /W thja 2 Jul. 2014 Revision 1.0 MagnaChip Semiconductor Ltd.