Product Information

MDU5593SVRH

MDU5593SVRH electronic component of Magnachip

Datasheet
Trans MOSFET N-CH 30V 13A/21A 8-Pin DFN EP T/R

Manufacturer: Magnachip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1924 ea
Line Total: USD 0.1924

1890 - Global Stock
Ships to you between
Fri. 05 Apr to Thu. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1890 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1

Stock Image

MDU5593SVRH
Magnachip

1 : USD 0.1924
10 : USD 0.1893
25 : USD 0.1861
100 : USD 0.183
250 : USD 0.1794
500 : USD 0.1794
1000 : USD 0.1794

1890 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 45
Multiples : 1

Stock Image

MDU5593SVRH
Magnachip

45 : USD 0.1861
100 : USD 0.183
250 : USD 0.1794

     
Manufacturer
Product Category
Transistor Polarity
Mounting Style
Packaging
Channel Mode
Operating Temp Range
Operating Temperature Classification
Gate-Source Voltage Max
Number Of Elements
Rad Hardened
Drain-Source On-Volt
Package Type
Type
Pin Count
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MDU5593S - Dual N-Channel Trench MOSFET 30V MDU5593S Dual Asymmetric N-channel Trench MOSFET 30V General Description Features The MDU5593S uses advanced MagnaChip s MOSFET FET1 FET2 Technology, which provides high performance in on-state V = 30V V = 30V DS DS resistance, fast switching performance and excellent I = 34A I = 40A @V = 10V D D GS quality. MDU5593S is suitable for DC/DC converter and R DS(ON) general purpose applications. < 8.0m < 3.3m @V = 10V GS < 11.0m < 5.0m @V = 4.5V GS 100% UIL Tested 100% Rg Tested S2 5 S2 6 S2 7 G2 8 S1/D2 3 1 D1 2 2 D1 1 3 D1 4 G1 o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol FET1 FET2 Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 20 V GSS o T =25 C (Silicon Limited) 52 95 C (1) o Continuous Drain Current T =25 C (Package Limited) I 34 40 A C D o T =25 C 13 21 A Pulsed Drain Current I 40 100 A DM o T =25 C 35.7 44.6 C Power Dissipation P W D o T =25 C 2.2 2.5 A (2) Single Pulse Avalanche Energy E 60 60 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Thermal Characteristics Characteristics Symbol FET1 FET2 Unit (1) Thermal Resistance, Junction-to-Ambient R 57 50 JA o C/W Thermal Resistance, Junction-to-Case R 3.5 2.8 JC 1 Jun. 2013 Ver1.2 MagnaChip Semiconductor Ltd. MDU5593S - Dual N-Channel Trench MOSFET 30V Ordering Information Part Number Temp. Range Package Packing RoHS Status o MDU5593SVRH -55~150 C Dual PDFN56 Tape & Reel Halogen Free o FET1 Electrical Characteristics (Ta =25 C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 1mA, V = 0V 30 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.0 1.8 3.0 GS(th) DS GS D Drain Cut-Off Current I V = 24V, V = 0V - - 1 DSS DS GS A Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 13A - 5.1 8.0 GS D Drain-Source ON Resistance R m DS(ON) V = 4.5V, I = 11A - 7.2 11.0 GS D Forward Transconductance g V = 5V, I = 13A - 35 - S fs DS D Dynamic Characteristics Total Gate Charge Q - 18.0 - g(10V) Total Gate Charge Q - 9.5 - g(4.5V) V = 15.0V, I = 10A, DS D nC V = 10V GS Gate-Source Charge Q - 3.2 - gs Gate-Drain Charge Q - 3.2 - gd Input Capacitance C - 1,142 - iss V = 15.0V, V = 0V, DS GS Output Capacitance C - 446 - pF oss f = 1.0MHz Reverse Transfer Capacitance C - 83 - rss Turn-On Delay Time t - 9.9 - d(on) Rise Time t - 12.1 - r V =15V, I =10A, R =3 ns DD D g Turn-Off Delay Time t - 28.5 - d(off) Fall Time t - 6.9 - f Gate Resistance Rg f=1 MHz - 1.0 - Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 1A, V = 0V - 0.7 1.0 V SD S GS Body Diode Reverse Recovery Time t - 31.8 - ns rr I = 10A, dl/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 29.4 - nC rr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at T =25 is silicon limited. C 2. E is tested at starting T = 25 , L = 0.5mH, I = 15.5A, V = 27V, V = 10V. And 100% UIL Test at L = 0.1mH, I = 18.0A. AS j AS DD GS AS 2 Jun. 2013 Ver1.2 MagnaChip Semiconductor Ltd.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
MagnaChip Semicon
MagnaChip Semiconductor

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