Product Information

MMD60R580PBRH

MMD60R580PBRH electronic component of Magnachip

Datasheet
Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) DPAK T/R

Manufacturer: Magnachip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2085 ea
Line Total: USD 0.2085

2008 - Global Stock
Ships to you between
Fri. 05 Apr to Thu. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2008 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1

Stock Image

MMD60R580PBRH
Magnachip

1 : USD 0.2085
10 : USD 0.2051
25 : USD 0.2017
100 : USD 0.1984
250 : USD 0.1944
500 : USD 0.1944
1000 : USD 0.1944

2008 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 41
Multiples : 1

Stock Image

MMD60R580PBRH
Magnachip

41 : USD 0.2017
100 : USD 0.1984
250 : USD 0.1944

     
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MMD60R580P Datasheet MMD60R580P 600V 0.58 N-channel MOSFET Description MMD60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. Key Parameters Package & Internal Circuit D Parameter Value Unit V @ T 650 V DS j,max R 0.58 DS(on),max V 3 V TH,typ G I 8 A D G Q 18 nC g,typ D S Features Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package Pb Free Plating, Halogen Free Applications PFC Power Supply Stages Switching Applications Adapter Motor Control DC DC Converters Ordering Information Order Code Marking Temp. Range Package Packing RoHS Status MMD60R580PRH 60R580P -55 ~ 150 D-PAK (TO-252) Reel & Tape Halogen Free 1 Jun. 2013 Revision 1.1 MagnaChip Semiconductor Ltd. MMD60R580P Datasheet Absolute Maximum Rating (T =25 unless otherwise specified) c Parameter Symbol Rating Unit Note Drain Source voltage V 600 V DSS Gate Source voltage V 30 V GSS 8 A T =25 C Continuous drain current I D 5 A T =100 C (1) Pulsed drain current I 24 A DM Power dissipation P 70 W D Single - pulse avalanche energy E 170 mJ AS MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness dv/dt 15 V/ns Storage temperature T -55 ~150 stg Maximum operating junction T 150 j temperature 1) Pulse width t limited by T P j,max 2) I I , V V SD D DS peak (BR)DSS Thermal Characteristics Parameter Symbol Value Unit Thermal resistance, junction-case max R 1.8 /W thjc Thermal resistance, junction-ambient max R 62.5 /W thja 2 Jun. 2013 Revision 1.1 MagnaChip Semiconductor Ltd.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
MagnaChip Semicon
MagnaChip Semiconductor

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