Product Information

MDD14N25CRH

MDD14N25CRH electronic component of Magnachip

MOSFET N Trench 250V 10.2A 4V @ 250uA 280 mΩ @ 5.1A,10V TO-252-2 (DPAK) RoHS

Manufacturer: Magnachip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6832 ea
Line Total: USD 0.68

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

MDD14N25CRH
Magnachip

1 : USD 0.6832
10 : USD 0.5677
30 : USD 0.4848
100 : USD 0.417
500 : USD 0.4045
1000 : USD 0.3995

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
LoadingGif

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The Magnachip MDD14N25CRH is a Trench-type N-channel MOSFET with a low on-state resistance, high current capacity, low gate charge, and low gate to source leakage current. This component is manufactured in a TO-252-2 (DPAK) package and is compliant with RoHS standards. The voltage rating for this component is 250V and the maximum allowed current is 10.2A. The gate threshold voltage is approximately 4V, with a gate-source leakage current of 250uA and a source-drain resistance of 280mohm at 5.1A and 10V. This advanced MOSFET technology is an ideal choice for high power applications, where low switching losses, low noise, and high efficiency are desired.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
MagnaChip Semicon
MagnaChip Semiconductor

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