The IXTN200N10L2 is a discrete semiconductor linear power MOSFET with extended FBSOA manufactured by IXYS. The device is designed to switch large amounts of power while operating at low loss and high speed. It has an on-state resistance of 1.2ohms, maximum drain-source voltage of 200V, maximum gate threshold voltage of 10V, and a drain current up to 200A. It also has built-in extended Fully-Buffered Source-Outer-Advance (FBSOA) functionality. This protects the device by limiting the magnitude of inductive loads so that the device is turned off safely and faster when supply fault conditions are detected. This module is suitable for brushless DC motors, power supplies, and motor controllers as well as other applications requiring a low-loss, high speed RDS(ON).