New Diode Data Sheet By Darel Bidwell 2 3 2 3 2 3 1 1 4 1 4 4 Anti-Parallel Parallel APT2x60DQ100J APT2x61DQ100J APT2x61DQ100J 1000V 60AUL Recognize file E145592 ISOTOP APT2x60DQ100J 1000V 60A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Anti-Parallel Diode Ultrafast Recovery Times Low Losses -Switchmode Power Supply -Inverters Soft Recovery Characteristics Low Noise Switching Free Wheeling Diode -Motor Controllers Popular SOT-227 Package Cooler Operation -Converters Higher Reliability Systems Snubber Diode Low Forward Voltage Increased System Power Uninterruptible Power Supply (UPS) High Blocking Voltage Density Induction Heating Low Leakage Current High Speed Rectiers Avalanche Energy Rated MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Characteristic / Test Conditions APT2x61 60DQ100J Symbol UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 1000 Volts RRM V Maximum Working Peak Reverse Voltage RWM Maximum Average Forward Current (T = 90C, Duty Cycle = 0.5) I 60 C F(AV) I RMS Forward Current (Square wave, 50% duty) 77 Amps F(RMS) Non-Repetitive Forward Surge Current (T = 45C, 8.3ms) I 540 J FSM E Avalanche Energy (1A, 40mH) 20 mJ AVL T ,T -55 to 175 C Operating and StorageTemperature Range J STG STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX I = 60A 2.2 2.8 F I = 120A V Forward Voltage Volts 2.67 F F I = 60A, T = 125C 1.68 F J V = 1000V 100 R I Maximum Reverse Leakage Current A RM V = 1000V, T = 125C 500 R J C pF Junction Capacitance, V = 200V 80 T R Microsemi Website - New Diode Data Sheet By Darel Bidwell DYNAMIC CHARACTERISTICS APT2x61 60DQ100J Symbol Characteristic Test Conditions MIN TYP MAX UNIT t I = 1A, di /dt = -100A/s, V = 30V, T = 25C - 36 Reverse Recovery Time rr F F R J ns t Reverse Recovery Time - 235 rr I = 60A, di /dt = -200A/s Q F F nC Reverse Recovery Charge - 445 rr V = 667V, T = 25C R C I Maximum Reverse Recovery Current - 5 - Amps RRM t Reverse Recovery Time - 285 ns rr I = 60A, di /dt = -200A/s Q F F - 2290 nC Reverse Recovery Charge rr V = 667V, T = 125C R C I - 13 - Maximum Reverse Recovery Current Amps RRM t Reverse Recovery Time - 125 ns rr I = 60A, di /dt = -1000A/s F F Q Reverse Recovery Charge - 4170 nC rr V = 667V, T = 125C R C I - 50 Maximum Reverse Recovery Current Amps RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R .56 C/W Junction-to-Case Thermal Resistance JC V RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Volts Isolation 2500 oz 1.03 W Package Weight T g 29.2 lbin 10 Torque Maximum Mounting Torque 1.1 Nm Microsemi reserves the right to change, without notice, the specications and information contained herein. 0.60 D = 0.9 0.50 0.7 0.40 0.30 0.5 Note: t 1 0.20 0.3 t 2 t 0.10 1 t Duty Factor D = / 2 0.1 SINGLE PULSE Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION T (C) T (C) J C Z are the external thermal EXT 0.148 0.238 0.174 impedances: Case to sink, Dissipated Power sink to ambient, etc. Set to (Watts) zero when modeling only 0.006 0.0909 0.524 the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 053-4233 Rev B 7-2006 Z , THERMAL IMPEDANCE (C/W) JC Z EXT P DM