Product Information

MCC26-16io1B

MCC26-16io1B electronic component of IXYS

Datasheet
Module; double series; 1.6kV; 27A; TO240AA; Ufmax:1.27V; Ifsm:520A

Manufacturer: IXYS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 146.95 ea
Line Total: USD 146.95

1 - Global Stock
Ships to you between
Fri. 05 Apr to Thu. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1
1 : USD 146.95
100 : USD 27.0125
250 : USD 25.275
500 : USD 23.975
1000 : USD 22.6625

14 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1
1 : USD 31.2
2 : USD 29.497

     
Manufacturer
Product Category
Mounting
Electrical Mounting
Case
Semiconductor Structure
Type Of Module
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
Load Current
Gate Current
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MCC26-16io1B V = 2x1600 V RRM Thyristor Module I = 27 A TAV V = 1.27 V T Phase leg Part number MCC26-16io1B Backside: isolated 3 1 2 6 7 5 4 Features / Advantages: Applications: Package: TO-240AA Thyristor for line frequency Line rectifying 50/60 Hz Isolation Voltage: V~ 4800 Planar passivated chip Softstart AC motor control Industry standard outline Long-term stability DC Motor control RoHS compliant Direct Copper Bonded Al2O3-ceramic Power converter Soldering pins for PCB mounting AC power control Base plate: DCB ceramic Lighting and temperature control Reduced weight Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d 2020 IXYS all rights reservedMCC26-16io1B Ratings Thyristor Symbol Definition Conditions min. typ. max. Unit T = 25C 1700 V V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ T = 25C 1600 V V max. repetitive reverse/forward blocking voltage RRM/DRM VJ I reverse current, drain current V = 1 6 0 0 V T = 25C 100 A R/D R/D VJ V = 1 6 0 0 V T = 1 2 5 C 3 mA R/D VJ forward voltage drop V I = 4 0 A T = 25C 1.27 V T T VJ I = 8 0 A 1.64 V T T = C 1.27 V I = 4 0 A 125 T VJ I = 8 0 A 1.65 V T average forward current T = 8 5 C T = 1 2 5 C 27 A I TAV C VJ RMS forward current I 180 sine 42 A T(RMS) V T = 1 2 5 C 0.85 V threshold voltage T0 VJ for power loss calculation only slope resistance r 11 m T 0.88 K/W R thermal resistance junction to case thJC thermal resistance case to heatsink R 0.2 K/W thCH P total power dissipation T = 25C 115 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 520 A I TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 560 A R t = 10 ms (50 Hz), sine T = 1 2 5 C A 440 VJ t = 8,3 ms (60 Hz), sine V = 0 V 475 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 1.35 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.31 kAs R t = 10 ms (50 Hz), sine T = 1 2 5 C 970 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 940 As R junction capacitance V = 4 0 0 V f = 1 MHz T = 25C 22 pF C J R VJ P max. gate power dissipation t = 30 s T = 1 2 5 C 10 W GM P C t = 300 s 5 W P 0.5 W P average gate power dissipation GAV critical rate of rise of current T = 125C f = 50 Hz repetitive, I = 45 A 150 (di/dt) A/s cr VJ T 0.45 t = 2 0 0 s di /dt = A/s P G I = 0.45A V = V non-repet., I = 27 A 500 A/s G DRM T critical rate of rise of voltage V = V T = 125C 1000 V/s (dv/dt) VJ cr DRM R = method 1 (linear voltage rise) GK gate trigger voltage V V = 6 V T = 25C 1.5 V GT D VJ T = -40C 1.6 V VJ gate trigger current V = 6 V T = 25C 100 mA I VJ GT D T = -40C 200 mA VJ gate non-trigger voltage V V = V T = 125C 0.2 V GD D DRM VJ gate non-trigger current I 10 mA GD latching current t = 10 s T = 25C 450 mA I VJ L p I = 0.45A di /dt = 0.45 A/s G G holding current I V = 6 V R = T = 25C 200 mA H D GK VJ gate controlled delay time t V = V T = 25C 2 s VJ gd D DRM I = 0.45A di /dt = 0.45 A/s G G turn-off time V = 100 V I = 20A V = V T =100 C 150 s t q R T DRM VJ di/dt = 10 A/s dv/dt = 20 V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d 2020 IXYS all rights reserved

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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