Product Information

TDB6HK135N16LOF

TDB6HK135N16LOF electronic component of Infineon

Datasheet
Discrete Semiconductor Modules 1600V 100A HF-CNTL

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 198.0392 ea
Line Total: USD 198.04

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 198.0392
5 : USD 195.1213
10 : USD 195.1213
25 : USD 195.1213
100 : USD 195.1087
250 : USD 185.6952

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Type
Vr - Reverse Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Configuration
Operating Temperature
Output Current
Brand
Gate Trigger Current - Igt
Holding Current Ih Max
Reverse Voltage
Typical Delay Time
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
AM29F080B-55EF electronic component of Infineon AM29F080B-55EF

NOR Flash Parallel 5V 8M-bit 1M x 8 55ns 40-Pin TSOP
Stock : 0

ATR2815S/CH electronic component of Infineon ATR2815S/CH

Module DC-DC 1-OUT 15V 2A 30W 10-Pin ATR
Stock : 1

24VSHIELDBTT6030TOBO1 electronic component of Infineon 24VSHIELDBTT6030TOBO1

Power Management IC Development Tools 24V Switch Shield
Stock : 7

65DN06 ELEM electronic component of Infineon 65DN06 ELEM

Infineon Technologies Rectifiers 600V 8.47KA
Stock : 1

6PS04512E43W39693 electronic component of Infineon 6PS04512E43W39693

IGBT Modules STACKS IPM
Stock : 0

6MS10017E41W36460 electronic component of Infineon 6MS10017E41W36460

IGBT Modules STACKS IPM
Stock : 0

2PS12017E44G35911 electronic component of Infineon 2PS12017E44G35911

IGBT Modules STACKS IPM
Stock : 0

24VBATTSWITCHDEMO1 electronic component of Infineon 24VBATTSWITCHDEMO1

Power Management IC Development Tools The 24 V ADR Switch Demonstrator shows a semiconductor based solution of a 24 V battery master switch for trucks as required by the ADR regulation
Stock : 2

AHV2815DF/HBB electronic component of Infineon AHV2815DF/HBB

Module DC-DC 28VIN 2-OUT 15V/-15V 1.5A/-1.5A 15W 10-Pin AHV
Stock : 1

ACICBOARDTOBO1 electronic component of Infineon ACICBOARDTOBO1

Interface Development Tools
Stock : 2

Image Description
MCC220-16io1 electronic component of IXYS MCC220-16io1

IXYS Discrete Semiconductor Modules 220 Amps 1600V
Stock : 0

MCC26-16io1B electronic component of IXYS MCC26-16io1B

Module; double series; 1.6kV; 27A; TO240AA; Ufmax:1.27V; Ifsm:520A
Stock : 1

DLW05B-15 electronic component of Mean Well DLW05B-15

Discrete Semiconductor Modules 5W 18-36Vin +/-15V +/-16.7 - +/-167mA
Stock : 1

25.350.1653.0 electronic component of Wieland 25.350.1653.0

PCB PIN STRIP 8213 S
Stock : 1

25.352.1653.0 electronic component of Wieland 25.352.1653.0

PCB Pin Strip - 8213 S/16 W
Stock : 1

Hot DLW05C-12 electronic component of Mean Well DLW05C-12

Discrete Semiconductor Modules 5W 36-72Vin +/-12V +/-20.8 - +/-208mA
Stock : 1

F1892SD1200 electronic component of Sensata F1892SD1200

Crydom Discrete Semiconductor Modules SCR MODULE 480VAC 90ADC 1200VP
Stock : 0

MD120A16D1-BP electronic component of Micro Commercial Components (MCC) MD120A16D1-BP

Discrete Semiconductor Modules STANDARD RECOVERY POWER MODULES
Stock : 1

MCD56-14IO8B electronic component of IXYS MCD56-14IO8B

Discrete Semiconductor Modules 56 Amps 1400V
Stock : 37

APT2X61DQ100J electronic component of Microchip APT2X61DQ100J

Discrete Semiconductor Modules Fast Recovery Epitaxial Diode - DQ
Stock : 30

Technische Information / Technical Information Netz-Thyristor-Modul 1) NB6 TT B6C 135 N 16 (ISOPACK) Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values T = - 40C...T V , V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung vj vj max 1600 V DRM RRM repetitive peak forward off-state and reverse voltages T = - 40C...T Vorwrts-Stospitzensperrspannung vj vj max V 1600 V DSM non-repetitive peak forward off-state voltage Rckwrts-Stospitzensperrspannung T = + 25C...T V 1600 V vj vj max RSM non-repetitive peak reverse voltage I Durchlastrom-Grenzeffektivwert (pro Element) 100 A TRMSM RMS on-state current (per chip) T = 85C Ausgangsstrom I 135 A C d T = 67C output current 173 A C T = 45C, KM 11 49 A A T = 45C, KM 33 69 A A T = 35C, KM 14 (V = 45l/s) 119 A A L T = 35C, KM 33 (V = 90l/s) 139 A A L T = 25C, t = 10ms I Stostrom-Grenzwert vj p 1000 A TSM T = T , t = 10ms surge current vj vj max p 870 A T = 25C, t = 10ms Grenzlastintegral vj p It 5000 As T = T , t = 10ms It-value vj vj max p 3780 As Kritische Stromsteilheit DIN IEC 747-6 (di/dt) 120 A/s cr critical rate of rise of on-state current f = 50Hz, i = 0,6A, di /dt = 0,6A/s GM G T = T , v = 0,67 V (dv/dt) Kritische Spannungssteilheit vj vj max D DRM cr 8. Kennbuchstabe / 8th letter F critical rate of rise of off-state voltage 1000 V/s Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 150A v max. 1,81 V vj vj max T T on-state voltage T = T V Schleusenspannung vj vj max 0,95 V (TO) threshold voltage T =T Ersatzwiderstand r 4,3 m vj vj max T slope resistance Zndstrom T = 25C, v = 6V I max. 150 mA vj D GT gate trigger current T = 25C, v = 6V V Zndspannung vj D max. 2,5 V GT gate trigger voltage T = T , v = 6V Nicht zndender Steuerstrom I max. 5,0 mA vj vj max D GD gate non-trigger current T = T , v = 0,5 V max. 2,5 mA vj vj max D DRM T = T , v = 0,5 V V Nicht zndende Steuerspannung vj vj max D DRM max. 0,2 V GD gate non-trigger voltage T = 25C, v = 6V, R = 5 I Haltestrom max. 200 mA vj D A H holding current Einraststrom T = 25C, v = 6V, R 20 I max. 600 mA vj D GK L latching current i = 0,6A, di /dt = 0,6A/s, t = 10s GM G g T = T i , i Vorwrts- und Rckwrts-Sperrstrom vj vj max max. 10 mA D R v = V , v = V forward off-state and reverse currents D DRM R RRM 1) gilt auch fr / also valid for TD B6HK 135 N 16 BIP PPE4 rev. 2 21. Okt 05 A 06/05 Seite/page 1(6)Technische Information / Technical Information Netz-Thyristor-Modul TT B6C 135 N 16 (ISOPACK) NB6 Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Zndverzug DIN IEC 747-6 t max. 1,2 s gd gate controlled delay time T = 25C, i = 0,6A, di /dt = 0,6A/s vj GM G T = T , i = 50A t Freiwerdezeit vj vj max TM q v = 100V, V = 0,67 V circuit commutated turn-off time RM DM DRM d /dt = 20V/s, -di /dt = 10A/s VD T 7. Kennbuchstabe / 7th letter O typ. 190 s Isolations-Prfspannung RMS, f = 50Hz, t = 1min V 3,0 kV ISOL RMS, f = 50Hz, t = 1sec insulation test voltage 3,6 kV Thermische Eigenschaften / Thermal properties R Innerer Wrmewiderstand pro Modul / per module, = 120rect max. 0,098 C/W thJC thermal resistance, junction to case pro Element / per chip, = 120rect max. 0,590 C/W pro Modul / per module, DC max. 0,078 C/W pro Element / per chip, DC max. 0,470 C/W bergangs-Wrmewiderstand pro Modul / per module R max. 0,033 C/W thCK pro Element / per chip thermal resistance, case to heatsink max. 0,200 C/W Hchstzulssige Sperrschichttemperatur T 125 C vj max max. junction temperature Betriebstemperatur T - 40...+125 C c op operating temperature T Lagertemperatur - 40...+130 C stg storage temperature Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see appendix page 3 Si-Elemente mit Ltkontakt, glaspassiviert Si-pellets with soldered contact, glass-passivated Innere Isolation Al O 2 3 internal insulation Anzugsdrehmoment fr mechanische Befestigung Toleranz / tolerance 15% M1 6 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz / tolerance +5% / -10% M2 6 Nm terminal connection torque Gewicht G typ. 300 g weight Kriechstrecke 12,5 mm creepage distance Schwingfestigkeit f = 50Hz 50 m/s vibration resistance Khlkrper / heatsinks : KM 11 KM 14 KM 17 KM 33 BIP PPE4 rev. 2 21. Okt 05 Seite/page 2(6)

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted