Product Information

PTFB092707FH-V1-R0

PTFB092707FH-V1-R0 electronic component of Wolfspeed

Datasheet
RF MOSFET Transistors RF LDMOS FET

Manufacturer: Wolfspeed
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 133.5148
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Type
Brand
Number Of Channels
Product Type
Factory Pack Quantity :
Subcategory
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PTFB092707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 960 MHz Description The PTFB092707FH is a 270-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output match- ing, high gain and thermally-enhanced package with earless flange. PTFB092707FH Manufactured with Wolfspeed s advanced LDMOS process, this device Package H-37288L-4/2 provides excellent thermal performance and superior reliability. Features Two-carrier WCDMA Drive-up Broadband internal input and output matching V = 28 V, I = 2150 mA, = 925 MHz, DD DQ 3GPP WCDMA signal, 8 dB PAR, Typical pulsed CW performance (10 s pulse 10 MHz carrier spacing, 3.84 MHz BW width10%, duty cycle, class AB), 960 MHz, 28 V - Output power at P = 250 W 1dB 21 50 - Efficiency = 52% - Gain = 18.5 dB 20 40 Gain Typical single-carrier WCDMA performance, 960 MHz, 28 V, 7.5 dB PAR 0.01% CCDF, - Output power = 63 W 19 30 - Efficiency = 33% - Gain = 19.5 dB 18 20 - ACPR = 35 dBc 3.84 MHz Capable of handling 10:1 VSWR 28 V, 220 W 17 10 (CW) output power Efficiency Integrated ESD protection 16 b092707fh-gr1a 0 Low thermal resistance 29 33 37 41 45 49 53 Pb-free and RoHS compliant Output Power (dBm) RF Characteristics Two-carrier WCDMA Specifications (tested in Wolfspeed test fixture) V = 28 V, I = 2150 mA, P = 60 W avg, = 960 MHz, 3GPP signal, 3.84 MHz channel bandwidth, 8 dB peak/average DD DQ OUT 0.01% CCDF, 10 MHz spacing Characteristic Symbol Min Typ Max Unit Gain G 18 19 dB ps Drain Efficiency h 28 29 % D Intermodulation Distortion IMD 34 33 dBc All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. 06, 2020-06-02 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com discontinued product Gain (dB) Drain Efficiency (%)PTFB092707FH 2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V = 0 V, I = 10 mA V( 65 V GS DS BR)DSS Drain Leakage Current V = 28 V, V = 0 V I 1 A DS GS DSS V = 63 V, V = 0 V I 10 A DS GS DSS Gate Leakage Current V = 10 V, V = 0 V I 1 A GS DS GSS On-State Resistance V = 10 V, V = 0.1 V R 0.05 W GS DS DS(on) Operating Gate Voltage V = 28 V, I = 2150 mA V 2.5 3.9 4.5 V DS DQ GS Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V 65 V DSS Gate-Source Voltage V 6 to +10 V GS Junction Temperature T 200 C J Storage Temperature Range T 40 to +150 C STG Thermal Resistance (T = 70C, 220 W CW) R 0.214 C/W CASE qJC Ordering Information Type and Version Order Code Package and Description Shipping PTFB092707FH V1 R0 PTFB092707FH-V1-R0 H-37288L-4/2, earless flange Tape & Reel, 50 pcs PTFB092707FH V1 R250 PTFB092707FH-V1-R250 H-37288L-4/2, earless flange Tape & Reel, 250 pcs Rev. 06, 2020-06-02 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com discontinued product

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Wolfspeed
Wolfspeed / Cree
Wolfspeed(CREE)

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