D5011UK

TetraFET D5011UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED A N MULTI-PURPOSE SILICON 8 1 D 7 2 DMOS RF FET C B P 6 3 10W 50V 500MHz 5 4 SINGLE ENDED H K FEATURES M L SIMPLIFIED AMPLIFIER DESIGN J E FG SUITABLE FOR BROAD BAND APPLICATIONS SO8 PACKAGE LOW C PIN 1 SOURCE PIN 5 SOURCE rss PIN 2 DRAIN PIN 6 GATE USEFUL P AT 1GHz O PIN 3 DRAIN PIN 7 GATE PIN 4 SOURCE PIN 8 SOURCE LOW NOISE Dim. mm Tol. Inches Tol. A 4.06 0.08 0.160 0.003 HIGH GAIN 13 dB MINIMUM B 5.08 0.08 0.200 0.003 C 1.27 0.08 0.050 0.003 D 0.51 0.08 0.020 0.003 E 3.56 0.08 0.140 0.003 F 4.06 0.08 0.160 0.003 APPLICATIONS G 1.65 0.08 0.065 0.003 +0.25 +0.010 H 0.76 0.030 HF/VHF/UHF COMMUNICATIONS -0.00 -0.000 0.51 Min. 0.020 Min. from 1 MHz to 1 GHz J 1.02 Max. 0.040 Max. K 45 Max. 45 Max. 0 Min. 0 Min. L 7 Max. 7 Max. M 0.20 0.08 0.008 0.003 N 2.18 Max. 0.086 Max. P 4.57 0.08 0.180 0.003 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) case P Power Dissipation 30W D BV Drain Source Breakdown Voltage 125V DSS BV Gate Source Breakdown Voltage 20V GSS I Drain Current 3A D(sat) T Storage Temperature 65 to 150C stg T Maximum Operating Junction Temperature 200C j Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 8198 E-mail: sales semelab.co.uk Website: D5011UK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit DrainSource BV V = 0 I = 100mA 125 V DSS GS D Breakdown Voltage Zero Gate Voltage I V = 50V V = 0 1 mA DSS DS GS Drain Current I Gate Leakage Current V = 20V V = 0 1 mA GSS GS DS V Gate Threshold Voltage* I = 10mA V = V 17 V GS(th) D DS GS g Forward Transconductance* V = 10V I = 0.5A 0.8 S fs DS D G Common Source Power Gain P = 10W 13 dB PS O h Drain Efficiency V = 50V I = 0.1A 50 % DS DQ VSWR Load Mismatch Tolerance f = 500MHz 20:1 C Input Capacitance V = 50V V = 5V f = 1MHz 60 pF iss DS GS C Output Capacitance V = 50V V = 0 f = 1MHz 25 pF oss DS GS C Reverse Transfer Capacitance V = 50V V = 0 f = 1MHz 1.5 pF rss DS GS * Pulse Test: Pulse Duration = 300 ms , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA R Thermal Resistance Junction Case Max. 6C / W THjcase Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 8198 E-mail: sales semelab.co.uk Website: