CGHV40320D
320 W, 4.0 GHz, GaN HEMT Die
Crees CGHV40320D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN
has superior properties compared to silicon or gallium arsenide, including higher breakdown
voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs
offer greater power density and wider bandwidths compared to Si and GaAs transistors.
FEATURES APPLICATIONS
19 dB Typical Small Signal Gain at 4 GHz Broadband amplifiers
65% Typical Power Added Efficiency Tactical communications
320 W Typical P Satellite communications
SAT
50 V Operation Industrial, Scientific, and Medical ampli -
High Breakdown Voltage fiers
Up to 4 GHz Operation Class AB, Linear amplifiers suitable for
OFDM, W-CDMA, LTE, EDGE, CDMA
waveforms
Packaging Information
Bare die are shipped on tape or in Gel-Pak containers.
Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
1
www.cree.com/rf
Rev 0.0 December 2014Absolute Maximum Ratings (not simultaneous)
Parameter Symbol Rating Units Conditions
Drain-source Voltage V 150 V 25C
DSS DC
Gate-source Voltage V -10, +2 V 25C
GS DC
Storage Temperature T -65, +150 C
STG
Operating Junction Temperature T 225 C
J
1
Maximum Drain Current I 12 A 25C
MAX
Maximum Forward Gate Current I 41.8 mA 25C
GMAX
2
Thermal Resistance, Junction to Case (packaged) R 0.44 C/W 85C, 167.2W Dissipation
JC
Thermal Resistance, Junction to Case (die only) R 0.35 C/W 85C, 167.2W Dissipation
JC
Mounting Temperature T 320 C 30 seconds
S
1
Note Current limit for long term reliable operation.
2
Note Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier.
Electrical Characteristics (Frequency = 4 GHz unless otherwise stated; T = 25C)
C
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics
Gate Pinch-Off Voltage V -3.8 -3.0 2.3 V V = 10 V, I = 41.8 mA
P DS D
1
Drain Current I 33 41.8 A V = 6 V, V = 2.0 V
DSS DS GS
Drain-Source Breakdown Voltage V 150 V V = -8 V, I = 41.8 mA
BD GS D
On Resistance R 0.07 V = 0.1 V
ON DS
Gate Forward Voltage V 1.9 V I = 41.8 mA
G-ON GS
RF Characteristics
Small Signal Gain G 19 dB V = 50 V, I = 500 mA
SS DD DQ
2
Saturated Power Output P 320 W V = 50 V, I = 500 mA
SAT DD DQ
3
Drain Efficiency 65 % V = 50 V, I = 500 mA, P = 320 W
DD DQ SAT
V = 50 V, I = 500 mA,
DD DQ
Intermodulation Distortion IM3 -30 dBc
P = 320 W PEP
OUT
No damage at all phase angles,
Y
Output Mismatch Stress VSWR 10 : 1 V = 50 V, I = 500 mA,
DD DQ
P = 320 W Pulsed
OUT
Dynamic Characteristics
Input Capacitance C 55.6 pF V = 50 V, V = -8 V, f = 1 MHz
GS DS gs
Output Capacitance C 11.56 pF V = 50 V, V = -8 V, f = 1 MHz
DS DS gs
Feedback Capacitance C 1.23 pF V = 50 V, V = -8 V, f = 1 MHz
GD DS gs
Notes:
1
Scaled from PCM data
2
P is defined as I = 4.0 mA.
SAT G
3
Drain Efficiency = P / P
OUT DC
Cree, Inc.
Copyright 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the 4600 Silicon Drive
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
Fax: +1.919.869.2733
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2 CGHV40320D Rev 0.0