QPD1003 500W, 50V, 1.2 1.4 GHz, GaN RF IMFET Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations. ROHS compliant. Evaluation boards are available upon request. Key Features Frequency: 1.2 to 1.4 GHz 1 Output Power (P3dB) : 540 W 1 Linear Gain : 19.9 dB 1 Typical PAE3dB : 66.7% Operating Voltage: 50 V Functional Block Diagram Low thermal resistance package Pulse capable Note 1: 1.3 GHz Applications Military radar Civilian radar Part No. Description Input Output QPD1003 1.21.4GHz RF IMFET Matching Matching Network Network QPD1003PCB401 1.2 1.4 GHz EVB Datasheet Rev. E, June 14, 2019 Subject to change without notice - 1 of 18 - www.qorvo.com QPD1003 500W, 50V, 1.2 1.4 GHz, GaN RF IMFET 1 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG +145 V Drain Voltage Range, VD +28 +50 +55 V Gate Voltage Range, V -7 to +2 V G Drain Bias Current, IDQ 750 mA Drain Current, IDMAX 20 A Drain Current, I 15 A D Gate Current Range, IG See page 4. mA 4 Gate Voltage, VG 2.8 V Power Dissipation, 10% DC 410 W Power Dissipation, Pulsed 1 mS PW, PDISS 370 W 2, 3 (PD) RF Input Power, 10% DC +42 dBm Notes: 1 mS PW, 1.3 GHz, T = 25C 1. Electrical performance is measured under conditions noted Mounting Temperature 320 C in the electrical specifications table. Specifications are not (30Seconds) guaranteed over all recommended operating conditions. Storage Temperature 65 to +150 C 2. Package base at 85 C 3. Pulse Width = 1 mS, Duty Cycle = 10% Notes: 4. To be adjusted to desired I DQ 1. Operation of this device outside the parameter ranges given above may cause permanent damage. 1 Pulsed Characterization Load-Pull Performance Power Tuned Parameters Typical Values Unit Frequency, F 1.2 1.3 1.4 GHz Linear Gain, GLIN 19 19.9 18.6 dB Output Power at 3dB 57.3 57.3 57 dBm compression point, P3dB Power-Added-Efficiency at 3dB 55.1 57.6 56.9 % compression point, PAE 3dB Gain at 3dB compression point 16 16.9 15.6 dB Notes: 1. Test conditions unless otherwise noted: VD = +50V, IDQ = 750mA, Temp = +25C 1 Pulsed Characterization Load-Pull Performance Efficiency Tuned Parameters Typical Values Unit Frequency, F 1.2 1.3 1.4 GHz Linear Gain, GLIN 20.3 20.6 19.4 dB Output Power at 3dB 55.4 55.6 55.3 dBm compression point, P 3dB Power-Added-Efficiency at 3dB 70.3 66.7 67.4 % compression point, PAE3dB Gain at 3dB compression point, 17.3 17.6 16.4 dB G 3dB Notes: 1. Test conditions unless otherwise noted: VD = +50V, IDQ = 750mA, Temp = +25C Datasheet Rev. E, June 14, 2019 Subject to change without notice - 2 of 18 - www.qorvo.com