QPD1010 10W, 50V, DC 4 GHz, GaN RF Transistor General Description The Qorvo QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvos proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. 16 Pin QFN (3 x3x0.85mm) The device is housed in an industry-standard 3 x 3 mm Product Features surface mount QFN package. Frequency: DC to 4 GHz Lead-free and ROHS compliant 1 Output Power (P3dB): 11 W 1 Linear Gain: 24.7 dB Evaluation boards are available upon request. 1 Typical DEFF3dB: 71% Operating Voltage: 50 V Low thermal resistance package Functional Block Diagram CW and Pulse capable 3 x 3 mm package Note 1: 2 GHz (Loadpull) Applications Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Ordering info Part No. Description QPD1010 DC4GHz RF Transistor QPD1010PCB1B01 0.96 1.215 GHz EVB QPD1010EVB02 2.7 3.5 GHz EVB Data Sheet Rev. E, October 2021 - 1 of 25 - Disclaimer: Subject to change without notice Subject to change without notice All rights reserved www.qorvo.com QPD1010 10W, 50V, DC 4 GHz, GaN RF Transistor 1 Absolute Maximum Ratings Parameter Rating Units Breakdown Voltage,BVDG +145 V Gate Voltage Range, V -7 to +2 V G Maximum Drain Current, IDMAX 1.46 A Gate Current Range, IG See page 4. mA Power Dissipation, CW, P 12.8 W DISS RF Input Power at 2 GHz, CW, 50, T = 25C +24 dBm Mounting Temperature (30Seconds) 320 C Storage Temperature 40 to +150 C Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. 1 Recommended Operating Conditions Parameter Min Typ Max Units Operating Temp. Range 40 +25 +85 C Drain Voltage Range, VD +12 +50 +60 V Drain Bias Current, I 18 mA DQ Drain Current, ID 400 mA 4 Gate Voltage, V 2.8 V G 2 Power Dissipation, CW (PD) 11.4 W 2, 3 Power Dissipation, Pulsed (PD) 13.5 W Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Back plane of package at 85 C 3. Pulse Width = 128 uS, Duty Cycle = 10% 4. To be adjusted to desired I DQ Data Sheet Rev. E, October 2021 - 2 of 25 - Disclaimer: Subject to change without notice Subject to change without notice All rights reserved www.qorvo.com