Product Information

BT138-800G,127

BT138-800G,127 electronic component of WeEn Semiconductor

Datasheet
Thyristors - TRIACs Two-way thyristor 800V TO-220-3 RoHS
Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.3843 ea
Line Total: USD 1921.5

0 - Global Stock
MOQ: 5000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 6000
Multiples : 1

Stock Image

BT138-800G,127
WeEn Semiconductor

6000 : USD 0.8898
8000 : USD 0.882
10000 : USD 0.8556
12000 : USD 0.8479
15000 : USD 0.8403
20000 : USD 0.8325
25000 : USD 0.8249
30000 : USD 0.8171
50000 : USD 0.8093

0 - WHS 2


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

BT138-800G,127
WeEn Semiconductor

1 : USD 2.4439
10 : USD 2.017
30 : USD 1.7055
100 : USD 1.4492
500 : USD 1.4067
1000 : USD 1.3866

Read More Specifications

     
Manufacturer
Product Category
Brand
Rohs
Package
Type
Voltage - Off State Max
Current - On State It Rms Max
Voltage - Gate Trigger Vgt Max
Current - Gate Trigger Igt Max
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Additional Infomation About Product

BT138-800G 4Q Triac 30 August 2013 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. 2. Features and benefits High blocking voltage capability Least sensitive gate for highest noise immunity Planar passivated for voltage ruggedness and reliability Triggering in all four quadrants 3. Applications General purpose motor control General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I non-repetitive peak on- full sine wave T = 25 C - - 95 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p T junction temperature - - 125 C j I RMS on-state current full sine wave T 99 C Fig. 1 - - 12 A T(RMS) mb Fig. 2 Fig. 3 Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - 5 50 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - 8 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - 10 50 mA D T T = 25 C Fig. 7 j Scan or click this QR code to view the latest information for this product TO-220ABNXP Semiconductors BT138-800G 4Q Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G+ - 22 100 mA D T T = 25 C Fig. 7 j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 200 250 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main terminal 2 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT138-800G TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BT138-800G All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 30 August 2013 2 / 13

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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