Product Information

VS-43CTQ100SPBF

VS-43CTQ100SPBF electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-43CTQ100S-M3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1
1000 : USD 3.237
10000 : USD 3.224
100000 : USD 3.1421
500000 : USD 3.0823
1000000 : USD 3.081
N/A

Obsolete
0 - WHS 2

MOQ : 1000
Multiples : 1000
1000 : USD 3.1121
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 4.9263
10 : USD 4.0898
100 : USD 3.3605
250 : USD 3.2604
500 : USD 2.9243
1000 : USD 2.8102
N/A

Obsolete
0 - WHS 4

MOQ : 3
Multiples : 1
3 : USD 6.5883
10 : USD 5.9733
25 : USD 5.4604
100 : USD 5.3808
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
LoadingGif

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VS-43CTQ...SPbF, VS-43CTQ...-1PbF Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES 2 D PAK TO-262 175 C T operation J Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Base Base common common High frequency operation cathode cathode Guard ring for enhanced ruggedness and long 2 2 term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Halogen-free according to IEC 61249-2-21 definition 2 2 Compliant to RoHS Directive 2002/95/EC 1 3 1 3 Common Common cathode Anode Anode Anode cathode Anode AEC-Q101 qualified VS-43CTQ...SPbF VS-43CTQ...-1PbF DESCRIPTION This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary PRODUCT SUMMARY barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching I 2 x 20 A F(AV) power supplies, freewheeling diodes, and reverse battery V 80 V/100 V R protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 40 A F(AV) V 80/100 V RRM I t = 5 s sine 850 A FSM p V 20 Apk, T = 125 C (per leg) 0.67 V F J T Range - 55 to 175 C J VOLTAGE RATINGS VS-43CTQ080SPbF VS-43CTQ100SPbF PARAMETER SYMBOL UNITS VS-43CTQ080-1PbF VS-43CTQ100-1PbF Maximum DC reverse voltage V R 80 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 20 forward current I 50 % duty cycle at T = 135 C, rectangular waveform F(AV) C per device 40 See fig. 5 A Maximum peak one cycle non-repetitive Following any rated load 5 s sine or 3 s rect. pulse 850 surge current per leg I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 275 See fig. 7 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 0.50 A, L = 60 mH 7.50 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 0.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 15-Mar-11 Document Number: 94224 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-43CTQ...SPbF, VS-43CTQ...-1PbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 20 A 0.81 T = 25 C J 40 A 0.98 Maximum forward voltage drop per leg (1) V V FM See fig. 1 20 A 0.67 T = 125 C J 40 A 0.81 T = 25 C 1 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 11 J Threshold voltage V 0.71 V F(TO) T = T maximum J J Forward slope resistance r 0.43 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 1480 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T - 55 to 175 C J Stg temperature range Maximum thermal resistance, 2.0 junction to case per leg R DC operation thJC Maximum thermal resistance, 1.0 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 43CTQ080S 2 Case style D PAK 43CTQ100S Marking device 43CTQ080-1 Case style TO-262 43CTQ100-1 Revision: 15-Mar-11 Document Number: 94224 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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