VS-30WQ10FN-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 3.5 A FEATURES Base 4 cathode Low forward voltage drop 4, 2 Guard ring for enhanced ruggedness and long term reliability 2 3 Popular D-PAK outline 1 1 3 Small foot print, surface mountable TO-252AA (D-PAK) Anode Anode High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY Material categorization: for definitions of compliance Package TO-252AA (D-PAK) please see www.vishay.com/doc 99912 I 3.5 A F(AV) DESCRIPTION V 100 V R The VS-30WQ10FN-M3 surface mount Schottky rectifier V at I See Electrical table F F has been designed for applications requiring low forward I 4.9 mA at 125 C RM drop and small foot prints on PC board. Typical applications T max. 150 C J are in disk drives, switching power supplies, converters, Diode variation Single die freewheeling diodes, battery charging, and reverse battery protection. E 5 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 3.5 A F(AV) V 100 V RRM I t = 5 s sine 440 A FSM p V 3 A , T = 125 C 0.63 V F pk J T -40 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-30WQ10FN-M3 UNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 135 C, rectangular waveform 3.5 F(AV) C See fig. 5 A Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 440 non-repetitive surge current I condition and with rated FSM See fig. 7 10 ms sine or 6 ms rect. pulse V applied 70 RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 10 mH 5.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 0.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 22-Nov-16 Document Number: 93299 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30WQ10FN-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 3 A 0.81 T = 25 C J 6 A 0.96 Maximum forward voltage drop (1) V V FM See fig. 1 3 A 0.63 T = 125 C J 6 A 0.74 T = 25 C 1 J Maximum reverse leakage current (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 4.9 J Threshold voltage V 0.48 V F(TO) T = T maximum J J Forward slope resistance r 30.89 m t Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 92 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 5.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, DC operation R 4.7 C/W thJC junction to case See fig. 4 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) 30WQ10FN Note dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 22-Nov-16 Document Number: 93299 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000