VS-30ETU12-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt FEATURES Base cathode 22 Ultrafast and soft recovery 2 Optimized forward voltage drop 175 C maximum operating junction temperature Polyimide passivation 1 Rugged design 1 3 33 Cathode Anode Good thermal performance 2L TO-220AC Meets JESD 201 class 1A whisker test Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS I 30 A F(AV) Ultrafast recovery rectifiers designed with optimized V 1200 V R performance of forward voltage drop, recovery time, and V at I at 125 C 2.05 V F F soft recovery. Polyimide passivated, planar structure, an d the platinum doped life time control guarantee, ruggedness, t 49 ns rr reliability characteristics, and solid value proposition for T max. 175 C J efficiency and thermal performance. Package 2L TO-220AC These devices are intended for use in boost stage in the Circuit configuration Single AC/DC section of SMPS, high frequency output rectificatio n of battery charger, inverters for solar inverters, or as freewheeling diodes in motor drive. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Repetitive peak reverse voltage V 1200 V RRM Average rectified forward current I T = 100 C, D = 0.50 30 A F(AV) C Repetitive peak forward current I 60 A FRM Non-repetitive peak surge current I T = 25 C, t = 10 ms, sine wave 240 A FSM C p Operating junction and storage temperature T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS V , BR Breakdown voltage, blocking voltage I = 500 A 1200 - - R V R V I = 30 A - 2.15 2.68 F Forward voltage V F I = 30 A, T = 125 C - 2.05 2.45 F J V = V rated - - 145 R R Reverse leakage current I A R T = 125 C, V = V rated - - 320 J R R Junction capacitance C V = 200 V - 29 - pF T R Series inductance L Measured to lead 5 mm from package body - 8 - nH S Revision: 22-Oct-2019 Document Number: 95990 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-30ETU12-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 49 - F F R Reverse recovery time t T = 25 C - 220 - ns rr J T = 125 C - 356 - J I = 30 A F T = 25 C - 8.2 - J Peak recovery current I dI /dt = 100 A/s A RRM F T = 125 C - 13.3 - J V = 390 V R T = 25 C - 900 - J Reverse recovery charge Q nC rr T = 125 C - 2388 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, junction to case R --0.8 thJC Thermal resistance, junction to ambient R Typical socket mount - - 54 C/W thJA Thermal resistance, case to heatsink R Mounting surface, flat, smooth, and greased - - 0.4 thCS -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Maximum junction and storage T , T -55 - 175 C J Stg temperature range Marking device Case style: 2L TO-220AC 30ETU12 100 1000 T = 175 C J T = 150 C J 100 10 T = 175 C J 10 T = 125 C J T = 25 C J 1 T = 125 C J 1 T = 25 C J 0.1 0.1 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1000 1200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 22-Oct-2019 Document Number: 95990 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R