VS-25ETS12SLHM3 www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 25 A FEATURES Meets MSL level 1, per J-STD-020, Base cathode LF maximum peak of 245 C 2 Glass passivated pellet chip junction AEC-Q101 qualified 2 Meets JESD 201 class 1A whisker test 3 Flexible solution for reliable AC power rectification 1 3 1 Anode Anode High surge, low V rugged blocking diode for DC charging F 2 D PAK (TO-263AB) stations Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS I 25 A F(AV) APPLICATIONS V 1200 V R Input rectification V at I 1.14 V F F On-board and off-board EV / HEV battery chargers I 300 A FSM T max. 150 C J DESCRIPTION 2 Package D PAK (TO-263AB) The VS-25ETS12SLHM3 rectifier High Voltage Series has Circuit configuration Single been optimized for very low forward voltage drop, with moderate leakage. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C A J 20 23 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 25 A F(AV) V 1200 V RRM I 300 A FSM V 10 A, T = 25 C 1.0 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM RSM V , MAXIMUM PEAK RRM NON-REPETITIVE PEAK REVERSE I AT 150 C RRM PART NUMBER REVERSE VOLTAGE VOLTAGE mA V V VS-25ETS12SLHM3 1200 1300 1 Revision: 22-Feb-18 Document Number: 96425 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-25ETS12SLHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 106 C, 180 conduction half sine wave 25 F(AV) C 10 ms sine pulse, rated V applied 250 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 316 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 25 A, T = 25 C 1.14 V FM J Forward slope resistance r 10.4 m t T = 150 C J Threshold voltage V 0.85 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Maximum junction and storage temperature range T , T -40 to +150 C J Stg Maximum thermal resistance, R DC operation 0.9 thJC junction to case Maximum thermal resistance, (1) 2 R For D PAK version 62 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth, and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. 2 Marking device Case style D PAK (TO-263AB) 25ETS12SH Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W Revision: 22-Feb-18 Document Number: 96425 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000