Product Information

VS-2EFU06HM3/I

VS-2EFU06HM3/I electronic component of Vishay

Datasheet
Rectifiers If(AV) 2A Vr 600V AEC-Q101 Qualified

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2696 ea
Line Total: USD 1.27

8825 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8718 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.506
10 : USD 0.391
100 : USD 0.2346
500 : USD 0.2174
10000 : USD 0.123

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
Cnhts
Hts Code
Taric
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VS-2EFU06HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 A FRED Pt FEATURES eSMP Series Ultrafast recovery time, reduced Q , and soft rr recovery 175 C maximum operating junction temperature For PCF CRM, snubber operation Low forward voltage drop Low leakage current Top view Bottom view Meets MSL level 1, per J-STD-020, LF maximum SMF (DO-219AB) peak of 260 C Wave and reflow solderable Cathode Anode AEC-Q101 qualified, meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 click logo to get started DESIGN SUPPORT TOOLS DESCRIPTION / APPLICATIONS Models State of the art ultrafast recovery rectifiers designed with Available optimized performance of forward voltage drop, ultrafast recovery time, and soft recovery. PRIMARY CHARACTERISTICS The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and I 2 A F(AV) reliability characteristics. V 600 V R These devices are intended for use in PFC, boost, lighting, V at I 0.95 V F F in the AC/DC section of SMPS, freewheeling and clamp t 55 ns rr diodes. T max. 175 C J Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power Package SMF (DO-219AB) dissipation in the switching element and snubbers. Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM (1) Average rectified forward current I T = 135 C 2 F(AV) C A Non-repetitive peak surge current I T = 25 C, 6 ms square pulse 30 FSM J Operating junction and storage temperature range T , T -55 to +175 C J Stg Note (1) Device on PCB with 8 mm x 16 mm soldering lands ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , V I = 100 A 600 - - BR R R blocking voltage V I = 2 A - 1.10 1.35 F Forward voltage V F I = 2 A, T = 150 C - 0.95 1.15 F J V = V rated - - 3 R R Reverse leakage current I A R T = 150 C, V = V rated - 20 100 J R R Junction capacitance C V = 600 V - 5 - pF T R Revision: 10-Aug-2018 Document Number: 95865 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-2EFU06HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 42 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 55 F R rr Reverse recovery time t ns rr T = 25 C -40- J = 125 C - 63 - T J I = 2 A F T = 25 C - 7.0 - J Peak recovery current I dI /dt = 500 A/s A RRM F T = 125 C - 8.1 - J V = 400 V R T = 25 C - 140 - J Reverse recovery charge Q nC rr T = 125 C - 255 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - +175 C J Stg temperature range Device mounted on PCB with 8 mm x 16 mm Thermal resistance, junction to case R -- 15 C/W thJC soldering lands Device mounted on PCB with 2 mm x 3.5 mm Thermal resistance, junction to ambient R - - 130 C/W thJA soldering lands 0.015 g Approximate weight 0.0005 oz. Marking device Case style SMF (DO-219AB) MPU 100 100 175 C 10 150 C 10 125 C T = 175 C J 1 0.1 1 25 C T = 150 C J 0.01 T = 125 C J T = 25 C J 0.1 0.001 0.2 0.7 1.2 1.7 2.2 2.7 3.2 100 200 300 400 500 600 V -Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 10-Aug-2018 Document Number: 95865 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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