VS-30CTH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 15 FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop 175 C operating junction temperature Low leakage current 1 Designed and qualified according to JEDEC -JESD 47 2 3 Material categorization: for definitions of compliance 3L TO-220AB please see www.vishay.com/doc 99912 Base common cathode DESCRIPTION / APPLICATIONS 4 200 V series are the state of the art hyperfast recovery rectifiers specifically designed with optimized performance 2 of forward voltage drop and hyperfast recovery time. Common cathode The planar structure and the platinum doped life time 1 3 Anode Anode control, guarantee the best overall performance, VS-30CTH02-M3 ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as PRIMARY CHARACTERISTICS freewheeling diode in low voltage inverters and chopper V 200 V motor drives. R V at I 0.78 V F F Their extremely optimized stored charge and low recovery t typ. See Recovery table current minimize the switching losses and reduce over rr dissipation in the switching element and snubbers. T max. 175 C J Package 3L TO-220AB I 2 x 15 A F(AV) Circuit configuration Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 200 V RRM per diode T = 159 C 15 C Average rectified forward current I F(AV) per device 30 A Non-repetitive peak surge current I T = 25 C 200 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R V I = 15 A - 0.92 1.05 F Forward voltage V F I = 15 A, T = 125 C - 0.78 0.85 F J V = V rated - - 10 R R Reverse leakage current I A R T = 125 C, V = V rated - 5 300 J R R Junction capacitance C V = 200 V - 57 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 26-Oct-17 Document Number: 96206 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30CTH02-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R I = 1 A, dI /dt = 100 A/s, V = 30 V - - 30 F F R Reverse recovery time t ns rr T = 25 C -26- J I = 15 A F T = 125 C - 40 - J dI /dt = 200 A/s F T = 25 C - 2.8 - J V = 160 V R Peak recovery current I A RRM T = 125 C - 6.0 - J T = 25 C - 37 - J Reverse recovery charge Q nC rr T = 125 C - 120 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Maximum junction and storage temperature T , T -65 - 175 C J Stg range Thermal resistance, junction-to-case per Mounting surface, flat, R -- 1.1 C/W thJC diode smooth and greased Marking device Case style 3L TO-220AB 30CTH02 100 100 T = 175 C J T = 150 C J 10 T = 125 C J 1 T = 100 C J T = 175 C J T = 125 C J T = 75 C 10 0.1 J T = 25 C J T = 50 C J 0.01 T = 25 C J 0.001 0.0001 1 0 50 100 150 200 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 26-Oct-17 Document Number: 96206 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward F Current (A) I - Reverse Current (A) R