Product Information

VS-8ETU04-1-M3

VS-8ETU04-1-M3 electronic component of Vishay

Datasheet
Rectifiers 400V 8A TO-262 Fred Pt

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2698 ea
Line Total: USD 1.27

625 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
592 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.8751
10 : USD 0.7556
100 : USD 0.5347
500 : USD 0.46
1000 : USD 0.3646
3000 : USD 0.3634
5000 : USD 0.3542
10000 : USD 0.3439

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
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VS-8ETU04S-M3, VS-8ETU04-1-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 8 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop Low leakage current 2 1 175 C operating junction temperature 1 Meets MSL level 1, per J-STD-020, LF maximum peak 3 2 of 245 C 2 D PAK (TO-263AB) 3 TO-262AA Material categorization: for definitions of compliance Base please see www.vishay.com/doc 99912 cathode 2 2 DESCRIPTION / APPLICATIONS Vishay Semiconductors FRED Pt series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast 1 3 1 3 recovery time. Anode N/C N/C Anode The planar structure and the platinum doped life time VS-8ETU04S-M3 VS-8ETU04-1-M3 control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification PRIMARY CHARACTERISTICS stage of SMPS, UPS, DC/DC converters as well as I 8 A F(AV) freewheeling diode in low voltage inverters and chopper V 400 V R motor drives. V at I 0.94 V Their extremely optimized stored charge and low recovery F F current minimize the switching losses and reduce over t typ. 35 ns rr dissipation in the switching element and snubbers. T max. 175 C J 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Repetitive peak reverse voltage V 400 V RRM Average rectified forward current I T = 155 C 8 F(AV) C Non-repetitive peak surge current I T = 25 C 100 A FSM C Repetitive peak forward current I 16 FRM Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 400 - - R blocking voltage V R V I = 8 A - 1.19 1.3 F Forward voltage V F I = 8 A, T = 150 C - 0.94 1.0 F J V = V rated - 0.2 10 R R Reverse leakage current I A R T = 150 C, V = V rated - 20 500 J R R Junction capacitance C V = 400 V - 14 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 25-Oct-17 Document Number: 96388 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-8ETU04S-M3, VS-8ETU04-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 35 60 F F R Reverse recovery time t T = 25 C -43- ns rr J T = 125 C - 67 - J I = 8 A F T = 25 C - 2.8 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 6.3 - J V = 200 V R T = 25 C - 60 - J Reverse recovery charge Q nC rr T = 125 C - 210 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, junction-to-case R -1.82.0 thJC Thermal resistance, junction-to-ambient R Typical socket mount - - 50 thJA C/W Mounting surface, flat, smooth, Thermal resistance, case-to-heatsink R -0.5 - thCS and greased -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style D PAK (TO-263AB) 8ETU04S Marking device Case style TO-262AA 8ETU04-1 100 1000 T = 175 C J 100 T = 150 C J 10 T = 125 C J 10 T = 100 C J 1 T = 175 C J 0.1 T = 25 C J T = 150 C J 1 T = 25 C J 0.01 0.001 0.1 0.0001 0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 25-Oct-17 Document Number: 96388 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous F Forward Current (A) I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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