VS-25ETS..SPbF Series www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 25 A FEATURES Meets MSL level 1, per J-STD-020, Base cathode LF maximum peak of 260 C 2 Glass passivated pellet chip junction Designed and qualified according to 2 JEDEC -JESD 47 3 Material categorization: 1 3 1 2 for definitions of compliance please see Anode Anode TO-263AB (D PAK) www.vishay.com/doc 99912 APPLICATIONS Input rectification PRODUCT SUMMARY 2 Vishay switches and output rectifiers which are available Package TO-263AB (D PAK) in identical package outlines I 25 A F(AV) V 800 V, 1000 V, 1200 V R DESCRIPTION V at I 1.14 V F F The VS-25ETS..SPbF rectifier High Voltage Series has been I 300 A optimized for very low forward voltage drop, with moderate FSM leakage. The glass passivation technology used has reliable T max. 150 C j operation up to 150 C junction temperature. Diode variation Single die OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C A J 20 23 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 25 A F(AV) V 800 to 1200 V RRM I 300 A FSM V 10 A, T = 25 C 1.0 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE RRM RSM I AT 150 C RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE mA V V VS-25ETS08SPbF 800 900 VS-25ETS10SPbF 1000 1100 1 VS-25ETS12SPbF 1200 1300 Revision: 12-Feb-16 Document Number: 94342 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-25ETS..SPbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 106 C, 180 conduction half sine wave 25 F(AV) C 10 ms sine pulse, rated V applied 250 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 316 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 25 A, T = 25 C 1.14 V FM J Forward slope resistance r 9.62 m t T = 150 C J Threshold voltage V 0.87 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.9 thJC junction to case Maximum thermal resistance, R 62 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 25ETS08S 2 Marking device Case style TO-263AB (D PAK) 25ETS10S 25ETS12S Revision: 12-Feb-16 Document Number: 94342 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000