End of Life May-2021 - Alternative Device: TSAL6200 TSUS6202 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Peak wavelength: = 950 nm p High reliability Angle of half intensity: = 15 Low forward voltage Suitable for high pulse current operation 94 8390 Good spectral matching with Si photodetectors Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION TSUS6202 is an infrared, 950 nm emitting diode in GaAs APPLICATIONS technology molded in a blue-gray tinted plastic package. Emitter in transmissive sensors Emitter in reflective sensors PRODUCT SUMMARY COMPONENT I (mW/sr) () (nm) t (ns) e P r TSUS6202 30 15 950 800 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSUS6202 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 150 mA F Peak forward current t /T = 0.5, t = 100 s I 300 mA p p FM Surge forward current t = 100 s I 2.5 A p FSM Power dissipation P 170 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 230 K/W thJA Rev. 1.1, 29-Jan-2021 Document Number: 84333 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of Life May-2021 - Alternative Device: TSAL6200 TSUS6202 www.vishay.com Vishay Semiconductors 180 120 160 100 140 120 80 100 60 80 R = 230 K/W thJA R = 230 K/W thJA 60 40 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21314 T - Ambient Temperature (C) 21313 amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V -1.3 1.7 V F p F Forward voltage I = 1.5 A, t = 100 s V -2.2 2.7 V F p F Temperature coefficient of V I = 100 mA TK --1.3- mV/K F F VF Reverse current V = 5 V I - - 100 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C -30 - pF R j I = 100 mA, t = 20 ms I 20 30 70 mW/sr F p e Radiant intensity I = 1.5 A, t = 100 s I 170 280 - mW/sr F p e Radiant power I = 100 mA, t = 20 ms -15 - mW F p e Temperature coefficient of I = 20 mA TK - -0.8 - %/K e F e Angle of half intensity - 15 - Peak wavelength I = 100 mA - 950 - nm F p Spectral bandwidth I = 100 mA -50 - nm F Temperature coefficient of I = 100 mA TK -0.2 - nm/K p F p I = 100 mA t - 800 - ns F r Rise time I = 1.5 A t - 400 - ns F r I = 100 mA t - 800 - ns F f Fall time I = 1.5 A t - 400 - ns F f Virtual source diameter d- 3.8 - mm Rev. 1.1, 29-Jan-2021 Document Number: 84333 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F