Infrared light emitting diode, top view type SIR-563ST3F Datasheet The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for compact optical control equipment. Applications Outline Optical control equipment Light source for remote control devices Features 1) High efficiency, high output P =11.0mW (I =50mA). O F 2) Wide radiation angle 1/2=15deg. 3) Emission spectrum well suited to silicon detectors ( =940nm). P 4) Good current-optical output linearity. 5) Long life, high reliability. Dimensions (Unit : mm) Absolute maximum ratings (T = 25C) a Parameter Symbol Value Unit I 100 mA Forward current F V 5.0 V Reverse voltage R P 160 mW Power dissipation D I * Pulse forward current 500 mA FP T Operating temperature 25 to 85 C opr T C Storage temperature 40 to 85 stg *Pulse width = 0.1 msec, duty ratio 1% www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.06 - Rev.C 1/4Datasheet SIR-563ST3F Electrical and optical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. P I =50mA -11 - mW Optical output O F I I =50mA Emitting strength 8.2 21 - mW/sr E F V I =50mA -1.34 1.6 V Forward voltage F F I V =3V Reverse current -- 10 A R R I =50mA - 940 - nm Peak light emitting wavelength p F I =50mA Spectral line half width -40 - nm F I =50mA - - deg Half-viewing angle 15 1/2 F I =50mA Response time trtf - 1.0 - s F f I =50mA Cut-off frequency -1.0 -MHz C F Classified table of rank Emitting Strength I Item Unit E 8.2 17.6 mW / sr Mto Nt12.3o 25.8 mW / sr 18.0 38.8 mW / sr Pto Qt27.1o 55.3 mW / sr Condition I =50mA F www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.06 - Rev.C 2/4