SUP57N20-33 Vishay Siliconix N-Channel 200-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ()I (A) (BR)DSS DS(on) D Available 175 C Junction Temperature 0.033 at V = 10 V 200 57 GS RoHS* COMPLIANT APPLICATIONS Isolated DC/DC converters - Primary-Side Switch TO-220AB D DRAIN connected to TAB G GD S Top View S Ordering Information: SUP57N20-33 SUP57N20-33-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit V Drain-Source Voltage 200 DS V V Gate-Source Voltage 20 GS T = 25 C 57 C Continuous Drain Current (T = 175 C) I J D T = 125 C 33 C A I Pulsed Drain Current 140 DM Avalanche Current I 35 AS a L = 0.1 mH E 61 mJ Single Pulse Avalanche Energy AS b T = 25 C C 300 a P Maximum Power Dissipation W D c T = 25 C 3.75 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R 40 Junction-to-Ambient (PCB Mount) thJA C/W R Junction-to-Case (Drain) 0.5 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1 square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72100 www.vishay.com S-71662-Rev. B, 06-Aug-07 1SUP57N20-33 Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min TypMaxUnit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 200 (BR)DSS DS D V V V = V , I = 250 A Gate-Threshold Voltage 24 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 160 V, V = 0 V 1 DS GS I V = 160 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 160 V, V = 0 V, T = 175 C 250 DS GS J a I V 5 V, V = 10 V 120 A On-State Drain Current D(on) DS GS V = 10 V, I = 30 A 0.027 0.033 GS D a r V = 10 V, I = 30 A, T = 125 C Drain-Source On-State Resistance 0.069 DS(on) GS D J V = 10 V, I = 30 A, T = 175 C 0.093 GS D J a g V = 15 V, I = 30 A Forward Transconductance 25 S fs DS D b Dynamic Input Capacitance C 5100 iss C V = 0 V, V = 25 V, f = 1 MHz Output Capacitance 480 pF oss GS DS Reverse Transfer Capacitance C 210 rss c Q Total Gate Charge 90 130 g c Q V = 100 V, V = 10 V, I = 85 A 23 nC Gate-Source Charge gs DS GS D c Q Gate-Drain Charge 34 gd c t 24 35 Turn-On Delay Time d(on) c t Rise Time V = 100 V, R = 1.5 220 330 r DD L ns c I 65 A, V = 10 V, R = 2.5 t D GEN G 45 70 Turn-Off Delay Time d(off) c t Fall Time 200 300 f b Source-Drain Diode Ratings and Characteristics (T = 25 C) C Continuous Current I 65 S A I Pulsed Current 140 SM a V I = 65 A, V = 0 V 1.0 1.5 V Forward Voltage SD F GS t Reverse Recovery Time 130 200 ns rr I I = 50 A, di/dt = 100 A/s Peak Reverse Recovery Current 812 A RM(REC) F Q Reverse Recovery Charge 0.52 1.2 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72100 2 S-71662-Rev. B, 06-Aug-07