Product Information

T2N7002BK,LM(T

T2N7002BK,LM(T electronic component of Toshiba

Datasheet
Transistor: N-MOSFET; unipolar; 60V; 400mA; 320mW; SOT23
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0663 ea
Line Total: USD 1.33

4074 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 20  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
48 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 5
Multiples : 5
5 : USD 0.1763
50 : USD 0.1445
150 : USD 0.1285
500 : USD 0.1166
2500 : USD 0.107
5000 : USD 0.1023

4074 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 20
Multiples : 5
20 : USD 0.0663
100 : USD 0.052
410 : USD 0.0403
1120 : USD 0.0377

6673 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 485
Multiples : 1
485 : USD 0.0759
531 : USD 0.0692
1000 : USD 0.0593
2000 : USD 0.0564
3000 : USD 0.0546

11640 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.0512
15000 : USD 0.0505
24000 : USD 0.0501
30000 : USD 0.0491

Read More Specifications

     
Manufacturer
Product Category
Kind Of Package
Mounting
Case
Features Of Semiconductor Devices
Kind Of Channel
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
Gate Charge
LoadingGif

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Additional Infomation About Product

T2N7002BK MOSFETs Silicon N-Channel MOS T2N7002BKT2N7002BKT2N7002BKT2N7002BK 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Switching 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance : R = 1.05 (typ.) ( V = 10 V) DS(ON) GS R = 1.15 (typ.) ( V = 5.0 V) DS(ON) GS R = 1.2 (typ.) ( V = 4.5 V) DS(ON) GS 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Source 3: Drain SOT23 Start of commercial production 2015-05 2015-2017 2017-11-30 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0T2N7002BK 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 400 mA D Drain current (pulsed) (Note 1), (Note 2) I 1200 DP Power dissipation (Note 3) P 320 mW D Power dissipation (Note 4) 1000 Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Repetitive rating pulse width limited by maximum channel temperature. pulse width 10 s, Duty 1 % Note 3: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR-4 glass epoxy board (Cu pad: 0.42 mm2 3) Note 4: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR-4 glass epoxy board (Cu pad: 645 mm2) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2015-2017 2017-11-30 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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