X-On Electronics has gained recognition as a prominent supplier of TC8220K6-G mosfet across the USA, India, Europe, Australia, and various other global locations. TC8220K6-G mosfet are a product manufactured by Microchip. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

TC8220K6-G

TC8220K6-G electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.TC8220K6-G
Manufacturer: Microchip
Category:MOSFET
Description: Microchip Technology MOSFET 2PR N- & PCH ENHANCE MODE MOSFET
Datasheet: TC8220K6-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.645 ea
Line Total: USD 2.64

Availability - 7094
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2337 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 250
Multiples : 1
250 : USD 2.375
500 : USD 2.3625
1000 : USD 2.35
3300 : USD 2.3375
6600 : USD 2.325
9900 : USD 2.325
13200 : USD 2.3125
16500 : USD 2.3

7094 - WHS 2


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 2.645
25 : USD 2.254
100 : USD 2.0815

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Product
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Supertex inc. TC8220 Two Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description High voltage Vertical DMOS technology The Supertex TC8220 consists of two pairs of high voltage, low Integrated gate-to-source resistor threshold N-channel and P-channel MOSFETs in a 12-Lead DFN Integrated gate-to-source Zener diode package. All MOSFETs have integrated the gate-to-source resistors Low threshold, Low on-resistance and gate-to-source Zener diode clamps which are desired for high Low input & output capacitance voltage pulser applications. The complimentary, high-speed, high Fast switching speeds voltage, gate-clamped N and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and Supertexs well-proven Electrically isolated N- and P-MOSFET pairs silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors Applications and with the high input impedance and positive temperature High voltage pulsers coefficient inherent in MOS devices. Amplifiers Buffers Characteristic of all MOS structures, these devices are free from Piezoelectric transducer drivers thermal runaway and thermally induced secondary breakdown. General purpose line drivers Supertexs vertical DMOS FETs are ideally suited to a wide range Logic level interfaces of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input and output capacitance, and fast switching speeds are desired. Typical Application Circuit V PP +100V +10V 0.47F 0.1F 1.0F VDD VH OE ENAB OUTA INA +PULSE 1.8 to 5.0V OUTB V NN Logic Imputs INB -100V -PULSE OUTC 1.0F INC DAMP OUTD IND GND VSS VL Supertex MD1822 10nF Supertex TC8220 Doc. DSFP-TC8220 Supertex inc. B080713 www.supertex.comTC8220 Ordering Information Product Summary BV /BV R (max) DSS DGS DS(ON) Part Number Package Option Packing N-Channel P-Channel N-Channel P-Channel TC8220K6-G 12-Lead DFN (4x4) 3000/Reel 200V -200V 5.3 6.5 -G denotes a lead (Pb)-free / RoHS compliant package Absolute Maximum Ratings Pin Configuration Parameter Value 1 GN1 12 SN1 Drain-to-source voltage BV DSS GP1 2 11 DN1 Thermal Drain-to-gate voltage BV DGS 3 10 GN2 DP1 Pad Operating and storage temperature -55C to +150C 4 SN2 9 SP1 Absolute Maximum Ratings are those values beyond which damage to GP2 5 8 DN2 the device may occur. Functional operation under these conditions is not 6 7 SP2 DP2 implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. 12-Lead DFN (top view) Typical Thermal Resistance Package ja Package Marking O 12-Lead DFN 42 C/W Y = Last Digit of Year Sealed Note: 8220 1.0oz, 4-layer, 3x4 PCB. W = Code for Week Sealed YWLL L = Lot Number = Green Packaging Package may or may not include the following marks: Si or 12-Lead DFN Doc. DSFP-TC8220 Supertex inc. B080713 2 www.supertex.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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