Si1013R/X Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (mA) DS DS(on) D Definition 1.2 at V = - 4.5 V - 350 GS High-Side Switching - 20 1.6 at V = - 2.5 V - 300 Low On-Resistance: 1.2 GS Low Threshold: 0.8 V (Typ.) 2.7 at V = - 1.8 V - 150 GS Fast Switching Speed: 14 ns 1.8 V Operation TrenchFET Power MOSFETs 2000 V ESD Protection Compliant to RoHS Directive 2002/95/EC SC-75A or SC-89 APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, G 1 Memories Battery Operated Systems 3 D Power Supply Converter Circuits SC-75A (SOT-416): Load/Power Switching Cell Phones, Pagers Si1013R - Marking Code D S 2 SC-89 (SOT-490): Si1013X - Marking Code B BENEFITS Top View Ease in Driving Switches Low Offset (Error) Voltage Ordering Information: Low-Voltage Operation Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) High-Speed Circuits Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free) Low Battery Voltage Operation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 6 GS T = 25 C - 400 - 350 A b I Continuous Drain Current (T = 150 C) D J T = 85 C - 300 - 275 A mA a I Pulsed Drain Current - 1000 DM b I - 275 - 250 Continuous Source Current (Diode Conduction) S T = 25 C 175 150 A b Maximum Power Dissipation for SC-75 T = 85 C 90 80 A P mW D T = 25 C 275 250 A b Maximum Power Dissipation for SC-89 T = 85 C 160 140 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board. Document Number: 71167 www.vishay.com S10-2432-Rev. D, 25-Oct-10 1Si1013R/X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.45 V GS(th) DS GS D I V = 0 V, V = 4.5 V Gate-Body Leakage 1 2 A GSS DS GS V = - 16 V, V = 0 V - 0.3 - 100 nA DS GS I Zero Gate Voltage Drain Current DSS V = - 16 V, V = 0 V, T = 85 C - 5 A DS GS J a I V = - 5 V, V = - 4.5 V - 700 mA On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 350 mA 0.8 1.2 GS D Drain-Source On-State R V = - 2.5 V, I = - 300 mA 1.2 1.6 DS(on) GS D a Resistance V = - 1.8 V, I = - 150 mA 1.8 2.7 GS D a g V = - 10 V, I = - 250 mA Forward Transconductance 0.4 S fs DS D a V I = - 150 mA, V = 0 V Diode Forward Voltage - 0.8 - 1.2 V SD S GS b Dynamic Q Total Gate Charge 1500 g Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 250 mA 150 pC gs DS GS D Q Gate-Drain Charge 450 gd Turn-On Delay Time t 5 d(on) t Rise Time V = - 10 V, R = 47 9 r DD L ns I - 200 mA, V = - 4.5 V, R = 10 Turn-Off Delay Time t 35 D GEN g d(off) t Fall Time 11 f Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise noted) A For the following graphs, P-Channel negative polarities for all voltage and current values are represented as positive values. 1.0 1000 V = 5 V thru 3 V GS 2.5 V T = - 55 C J 0.8 25 C 800 0.6 600 125 C 2 V 0.4 400 1.8 V 0.2 200 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71167 2 S10-2432-Rev. D, 25-Oct-10 I - Drain Current (A) D I - Drain Current (mA) D