Product Information

RT1A045APTCR

RT1A045APTCR electronic component of ROHM

Datasheet
MOSFET 1.5V Drive Pch MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6514 ea
Line Total: USD 0.65

485 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
485 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.6514
10 : USD 0.6443
100 : USD 0.5671
500 : USD 0.3334
1000 : USD 0.3263
3000 : USD 0.2622
6000 : USD 0.2563
9000 : USD 0.248
24000 : USD 0.2456

1279 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 300
Multiples : 1
300 : USD 0.3208

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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RT1A045AP Datasheet Pch -12V -4.5A Power MOSFET llOutline TSST8 V -12V DSS R (Max.) 30m DS(on) I 4.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8). 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters Basic ordering unit (pcs) 3000 Taping code TR Marking SC llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS I Continuous drain current 4.5 A D *2 I Pulsed drain current 18 A D,pulse V Gate - Source voltage 0 to -8 V GSS *3 P 1.25 W D Power dissipation *4 P 0.65 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 RT1A045AP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. - - 100 /W *3 R Thermal resistance, junction - ambient thJA - - 192 /W llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -12 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current I Gate - Source leakage current V = -8V, V = 0V - - -10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.6 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -4.5A - 22 30 GS D V = -2.5V, I = -2.2A - 28 39 GS D Static drain - source *5 R V = -1.8V, I = -2.2A - 38 57 m DS(on) GS D on - state resistance V = -1.5V, I = 0.9A - 50 100 GS D V = -4.5V, I = -4.5A, T = 125 GS D j - 34 48 R Gate input resistance f = 1MHz, open drain - 20 - G Forward Transfer *5 Y V = -6V, I = -4.5A 5.5 11 - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4(20200.8mm) *5 Pulsed www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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ROHM Semiconductor

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