IL420, IL4208 www.vishay.com Vishay Semiconductors Optocoupler, Phototriac Output, High dV/dt, Low Input Current FEATURES 1 6 MT2 A High input sensitivity I = 2 mA FT NC 2 5 600 V, 800 V blocking voltage C 300 mA on-state current 3 4 MT1 NC High static dV/dt 10 kV/s i179035 2 V 21842-1 DE Very low leakage < 10 A Isolation test voltage 5300 V RMS DESCRIPTION Small 6-pin DIP package The IL420 and IL4208 consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC Material categorization: For definitions of compliance network. The TRIAC consists of two inverse parallel please see www.vishay.com/doc 99912 connected monolithic SCRs. These three semiconductors are assembled in a six pin dual in-line package. APPLICATIONS High input sensitivity is achieved by using an emitter Solid state relays follower phototransistor and a cascaded SCR predriver Industrial controls resulting in an LED trigger current of less than 2 mA (DC). Office equipment The use of a proprietary dV/dt clam results in a static dV/dt of greater than 10 kV/s. This clamp circuit has a MOSFET Consumer appliances that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET AGENCY APPROVALS clamps the base of the phototransistors, disabling the first UL1577, file no. E52744 system code H, double protection stage SCR predriver. CSA 93751 The 600 V, 800 V blocking voltage permits control of offline voltages up to 240 VAC, with a safety factor of more than DIN EN 60747-5-5 (VDE 0884), available with option 1 two, and is sufficient for as much as 380 V . AC CQC: GB8898-2001 The IL420, IL4208 isolates low-voltage logic from 120 V , AC 240 V , and 380 V lines to control resistive, inductive, or AC AC capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays. ORDERING INFORMATION DIP- I L 42 0 - X 0 T 7.62 mm Option 6 Option 7 PART NUMBER PACKAGE OPTION TAPE AND 10.16 mm > 0.7 mm REEL Option 8 Option 9 9.27 mm > 0.1 mm AGENCY CERTIFIED/PACKAGE BLOCKING VOLTAGE V (V) DRM UL, cUL, CQC 600 800 DIP-6 IL420 IL4208 DIP-6, 400 mil, option 6 IL420-X006 - (1) (1) SMD-6, option 7 IL420-X007T IL4208-X007T SMD-6, option 8 IL420-X008T - (1) (1) SMD-6, option 9 IL420-X009T IL4208-X009T VDE, UL, cUL, CQC 600 800 DIP-6 IL420-X001 - DIP-6, 400 mil, option 6 IL420-X016 - (1) SMD-6, option 7 IL420-X017T IL4208-X017T Note (1) Also available in tubes, do not put T on the end. Rev. 2.1, 11-Jun-13 Document Number: 83629 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IL420, IL4208 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Surge current I 2.5 A FSM Power dissipation P 100 mW diss Derate from 25 C 1.33 mW/C OUTPUT IL420 V 600 V DRM Peak off-state voltage IL4208 V 800 V DRM RMS on-state current I 300 mA TM Single cycle surge current I 3A TSM Power dissipation P 500 mW diss Derate from 25 C 6.6 mW/C COUPLER Isolation test voltage t = 1 s V 5300 V ISO RMS between emitter and detector 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature range T - 55 to + 150 C stg Ambient temperature range T - 55 to + 100 C amb max. 10 s dip soldering (1) Soldering temperature T 260 C sld 0.5 mm from case bottom Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 10 mA V 1.16 1.35 V F F Reverse current V = 6 V I 0.1 10 A R R Input capacitance V = 0 V, f = 1 MHz C 40 pF F IN Thermal resistance, junction to ambient R 750 C/W thja OUTPUT Off-state current V = V , T = 100 C I 10 100 A D DRM amb DRM On-state voltage I = 300 mA V 1.7 3 V T TM Surge (non-repetitive), on-state current f = 50 Hz I 3A TSM Holding current I 65 500 A H Latching current V = 2.2 V I 500 A T L LED trigger current V = 5 V I 12 mA D FT Trigger current temperature gradient I /T 714 A/C FT j V = 0.67 V , T = 25 C dV/dt 10 000 V/s D DRM j cr Critical rate of rise off-state voltage V = 0.67 V , T = 80 C dV/dt 5000 V/s D DRM j cr V = 230 V , I = 300 mA , T = 25 C dV/dt 8V/s D RMS D RMS J crq Critical rate of rise of voltage at current commutation V = 230 V , I = 300 mA , T = 85 C dV/dt 7V/s D RMS D RMS J crq Critical rate of rise of on-state current dI/dt 12 A/ms crq commutation Thermal resistance, junction to ambient R 150 C/W thja Rev. 2.1, 11-Jun-13 Document Number: 83629 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000