Product Information

BPV22F

BPV22F electronic component of Vishay

Datasheet
Photodiodes Sideview 870-1050nm +/-60 deg

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7567 ea
Line Total: USD 0.76

3185 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
34522 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

BPV22F
Vishay

1 : USD 0.5563
10 : USD 0.4835
100 : USD 0.4655
500 : USD 0.4608
1000 : USD 0.4528
4000 : USD 0.4482
8000 : USD 0.4393
12000 : USD 0.4393
28000 : USD 0.4393

3587 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

BPV22F
Vishay

1 : USD 0.5018
10 : USD 0.4766
100 : USD 0.4671
500 : USD 0.4671
1000 : USD 0.4671

175982 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 4000
Multiples : 4000

Stock Image

BPV22F
Vishay

4000 : USD 0.4808

3185 - WHS 4


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

BPV22F
Vishay

1 : USD 0.7567
10 : USD 0.5693
100 : USD 0.4715
500 : USD 0.452
1000 : USD 0.4152
2000 : USD 0.4152
4000 : USD 0.4128
12000 : USD 0.4082
24000 : USD 0.4014

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Reverse Voltage
Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Package / Case
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Forward Current
Power Dissipation
Noise Equivalent Power - Nep
Photocurrent
Responsivity
Factory Pack Quantity :
Height
Width
Cnhts
Hts Code
If - Forward Current
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vf - Forward Voltage
LoadingGif

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BPV22F www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: leaded Package form: side view Dimensions (in mm): 4.5 x 5 x 6 2 Radiant sensitive area (in mm ): 7.5 High radiant sensitivity Daylight blocking filter matched with 940 nm emitters Fast response times 94 8633 Angle of half sensitivity: = 60 Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document Vishay Material Category Policy: www.vishay.com/doc 99902 DESCRIPTION BPV22F is a PIN photodiode with high speed and high APPLICATIONS radiant sensitivity in a black, plastic package with side view High speed detector for infrared radiation lens and daylight blocking filter. Filter bandwdith is matched with 900 nm to 950 nm IR emitters. The lens achieves 80 % Infrared remote control and free air data transmission of sensitivity improvement in comparison with flat package. systems, e.g. in combination with TSALxxxx series IR emitters PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 BPV22F 80 60 870 to 1050 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPV22F Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Rev. 1.6, 24-Aug-11 Document Number: 81508 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPV22F www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 11.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro Diode capacitance V = 0 V, f = 1 MHz, E = 0 C 70 pF R D Serial resistance V = 12 V, f = 1 MHz R 400 R S 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 370 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 75 A e k 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 55 80 A ra V = 5 V R 2 E = 1 mW/cm , = 950 nm, e Temperature coefficient of I TK 0.1 %/K ra Ira V = 10 V R V = 5 V, = 870 nm s()0.35 A/W R Absolute spectral sensitivity V = 5 V, = 950 nm s()0.6 A/W R Angle of half sensitivity 60 deg Wavelength of peak sensitivity 950 nm p Range of spectral bandwidth 870 to 1050 nm 0.5 Quantum efficiency = 950 nm 90 % -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/ Hz R 12 Detectivity V = 10 V, = 950 nm D* 6 x 10 cmHz/W R Rise time V = 10 V, R = 1 k, = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k, = 820 nm t 100 ns R L f V = 12 V, R = 1 k, = 870 nm f 4MHz R L c Cut-off frequency V = 12 V, R = 1 k, = 950 nm f 1MHz R L c BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.4 V =5V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 0.6 1 0 20 40 60 80 100 20 40 60 80 100 T - Ambient Temperature (C) 94 8403 T - Ambient Temperature (C) 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.6, 24-Aug-11 Document Number: 81508 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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