Product Information

BPV23NF

BPV23NF electronic component of Vishay

Datasheet
Photodiodes Sideview 790-1050nm +/-60 deg

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0005 ea
Line Total: USD 1

841 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
841 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

BPV23NF
Vishay

1 : USD 1.0005
10 : USD 0.6383
100 : USD 0.4922
500 : USD 0.46
1000 : USD 0.3898
2000 : USD 0.3852
4000 : USD 0.3852
12000 : USD 0.3784
24000 : USD 0.3726

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Reverse Voltage
Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Forward Current
Power Dissipation
Noise Equivalent Power - Nep
Photocurrent
Responsivity
Factory Pack Quantity :
Height
Width
Cnhts
Hts Code
If - Forward Current
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vf - Forward Voltage
LoadingGif

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BPV23NF, BPV23NFL www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: leaded Package form: side view Dimensions (in mm): 4.5 x 5 x 6 2 Radiant sensitive area (in mm ): 4.4 High radiant sensitivity Daylight blocking filter matched with 870 nm to 950 nm emitters Fast response times 94 8633 Angle of half sensitivity: = 60 Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document Vishay Material Category Policy: www.vishay.com/doc 99902 DESCRIPTION BPV23NF is a PIN photodiode with high speed and high APPLICATIONS radiant sensitivity in a black, plastic package with side view High speed detector for infrared radiation lens and daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters. The lens achieves 80 % Infrared remote control and free air data transmission of sensitivity improvement in comparison with flat package. systems, e.g. in combination with TSFFxxxx series IR BPV23NFL has long leads, other specifications like emitters BPV23NF. PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 BPV23NF 65 60 790 to 1050 BPV23NFL 65 60 790 to 1050 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPV23NF Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view BPV23NFL Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view, long leads Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Rev. 1.8, 24-Aug-11 Document Number: 81513 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPV23NF, BPV23NFL www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 11.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro Diode capacitance V = 0 V, f = 1 MHz, E = 0 C 48 pF R D Serial resistance V = 12 V, f = 1 MHz R 900 R S 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 390 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 65 A e k 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 45 65 A ra V = 5 V R 2 E = 1 mW/cm , = 950 nm, e Temperature coefficient of I TK 0.1 %/K ra Ira V = 10 V R V = 5 V, = 870 nm s()0.57 A/W R Absolute spectral sensitivity V = 5 V, = 950 nm s()0.60 A/W R Angle of half sensitivity 60 deg Wavelength of peak sensitivity 940 nm p Range of spectral bandwidth 790 to 1050 nm 0.5 Quantum efficiency = 950 nm 90 % -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/ Hz R 12 Detectivity V = 10 V, = 950 nm D* 5 x 10 cmHz/W R Rise time V = 10 V, R = 1 k, = 820 nm t 70 ns R L r Fall time V = 10 V, R = 1 k, = 820 nm t 70 ns R L f V = 12 V, R = 1 k, = 870 nm f 4MHz R L c Cut-off frequency V = 12 V, R = 1 k, = 950 nm f 1MHz R L c BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.4 V =5V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 1 0.6 20 40 60 80 100 0 20 40 60 80 100 94 8403 T - Ambient Temperature (C) T - Ambient Temperature (C) 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.8, 24-Aug-11 Document Number: 81513 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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