Product Information

BAT85S-TR

Hot BAT85S-TR electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers 200mA 30 Volt 5.0 Amp IFSM
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

157: USD 0.0573 ea
Line Total: USD 9

34786 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 157  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
9685 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 5
Multiples : 5

Stock Image

BAT85S-TR
Vishay

5 : USD 0.1515
50 : USD 0.122
150 : USD 0.1074
500 : USD 0.0964
2500 : USD 0.0875
5000 : USD 0.0832

9152 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

BAT85S-TR
Vishay

1 : USD 0.4025
10 : USD 0.3013
100 : USD 0.1219
1000 : USD 0.0748
2500 : USD 0.0655
10000 : USD 0.0552
25000 : USD 0.0529
50000 : USD 0.0483
100000 : USD 0.046

34786 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 157
Multiples : 1

Stock Image

BAT85S-TR
Vishay

157 : USD 0.0573
250 : USD 0.0546
500 : USD 0.052
1000 : USD 0.0495
3000 : USD 0.0469
6000 : USD 0.0459

8691 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 632
Multiples : 1

Stock Image

BAT85S-TR
Vishay

632 : USD 0.0597
1000 : USD 0.0555

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Recovery Time
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BAT85S www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES Integrated protection ring against static discharge Very low forward voltage AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Applications where a very low forward voltage is required DESIGN SUPPORT TOOLS click logo to get started MECHANICAL DATA Case: DO-35 (DO-204AH) Models Available Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAT85S BAT85S-TR or BAT85S-TAP Single BAT85S Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 30 V R Peak forward surge current t 10 ms I 5A p FSM Repetitive peak forward current t < 1 s I 300 mA p FRM Forward continuous current I 200 mA F PCB mounting, I = 4 mm Average forward current I 200 mA FAV V = 25 V, T = 50 C RWM amb THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air I = 4 mm, T = constant R 350 K/W L thJA Junction temperature T 125 C j Storage temperature range T -65 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 0.1 mA V 240 mV F F I = 1 mA V 320 mV F F Forward voltage I = 10 mA V 400 mV F F I = 30 mA V 500 mV F F I = 100 mA V 800 mV F F Reserve current V = 25 V I 2A R R Diode capacitance V = 1 V, f = 1 MHz C 10 pF R D Reserve recovery time I = 10 mA to I = 10 mA to i = 1 mA t 5ns F R R rr Rev. 1.9, 02-Jun-17 Document Number: 85513 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAT85S www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 200 1000 V = 30 V 180 R T = 125 C j 160 100 140 R = 540 kW thJA 120 T = 25 C j P - Limit R at 100 % V 10 100 R 80 P - Limit 60 R 1 at 80 % V R 40 20 0 0.1 25 50 75 100 125 150 0 0.5 1.0 1.5 15822 V - Forward Voltage (V) T - Junction Temperature (C) 15824 j F Fig. 1 - Maximum Reverse Power Dissipation vs. Fig. 3 - Forward Current vs. Forward Voltage Junction Temperature 1000 10 f = 1 MHz 9 V = V R RRM 8 7 100 6 5 4 10 3 2 1 1 0 25 50 75 100 125 150 0.1 1 10 100 15825 V - Reverse Voltage (V) 15823 T - Junction Temperature (C) R j Fig. 2 - Reverse Current vs. Junction Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) Cathode Identicfi ation 26 min. 1.024 3.9 max. 0.154 26 min. 1.024 3.1 min. 0.120 Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.9, 02-Jun-17 Document Number: 85513 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) P - Reverse Power Dissipation (mW) R R 0.6 max. 0.024 0.4 min. 0.015 I - Forward Current (mA) F C - Diode Capacitance (pF) D 1.7 0.067 1.3 0.050

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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