BAT86S-TR

BAT86S www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES Integrated protection ring against static discharge Very low forward voltage AEC-Q101 qualified Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Applications where a very low forward voltage is required MECHANICAL DATA Case: DO-35 Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS BAT86S BAT86S-TR or BAT86S-TAP Single diode BAT86S Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 50 V R Peak forward surge current t 10 ms I 5A p FSM Repetitive peak forward current t 1 s I 500 mA p FRM Forward continuous current I 200 mA F PCB mounting, I = 4 mm Average forward current I 200 mA FAV V = 25 V, T = 50 C RWM amb THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air I = 4 mm, T = constant R 320 K/W L thJA Junction temperature T 125 C j Storage temperature range T - 65 to + 150 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 0.1 mA V 300 mV F F I = 1 mA V 380 mV F F Forward voltage I = 10 mA V 450 mV F F I = 30 mA V 600 mV F F I = 100 mA V 900 mV F F Reserve current V = 40 V I 5A R R Diode capacitance V = 1 V, f = 1 MHz C 8pF R D Rev. 1.9, 06-May-13 Document Number: 85514 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAT86S www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 500 1000 V = 50 V 450 R T = 125 C j 400 100 350 300 T = 25 C j 10 250 P - Limit R at 100 %V 200 R 150 1 P - Limit R = 540 K/W thJA R 100 at 80 %V R 50 0.1 0 0 0.5 1.0 1.5 25 50 75 100 125 150 15829 15827 T - Junction Temperature (C) V - Forward Voltage (V) j F Fig. 1 - Max. Reverse Power Dissipation vs. Fig. 3 - Forward Current vs. Forward Voltage Junction Temperature 10000 10 V =V 9 R RRM f = 1 MHz 8 1000 7 6 100 5 4 3 10 2 1 1 0 25 50 75 100 125 150 0.1 1 10 100 15828 T - Junction Temperature (C) j V - Reverse Voltage (V) 15830 R Fig. 2 - Reverse Current vs. Junction Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 26 min. 1.024 3.9 max. 0.154 26 min. 1.024 3.1 min. 0.120 Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.9, 06-May-13 Document Number: 85514 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) P- Reverse Power Dissipation (mW) R R 0.6 max. 0.024 0.4 min. 0.015 C - Diode Capacitance (pF) I - Forward Current (A) D F 1.7 0.067 1.3 0.050