Product Information

UJ3D1210TS

UJ3D1210TS electronic component of UnitedSiC

Datasheet
Schottky Diodes & Rectifiers 1200V/10A SiC SCHOTTKY DIODE G3, TO-220, ENHANCED SURGE
Manufacturer: UnitedSiC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.535 ea
Line Total: USD 9.54

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

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UJ3D1210TS
UnitedSiC

1 : USD 9.535
10 : USD 6.24
100 : USD 5.1074

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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Additional Infomation About Product

10A -1200V SiC Schottky Diode Rev. C, February 2020 DATASHEET Description rd UnitedSiC offers the 3 generation of high performance SiC Merged- UJ3D1210TS PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. CASE Features CASE w Maximum operating temperature of 175C w Easy paralleling w Extremely fast switching not dependent on temperature w No reverse or forward recovery w Enhanced surge current capability, MPS structure w Excellent thermal performance, Ag sintered 1 2 w 100% UIS tested w AEC-Q101 qualified 1 2 Typical applications w Power converters Part Number Package Marking w Industrial motor drives w Switch mode power supplies UJ3D1210TS TO-220-2L UJ3D1210TS w Power factor correction modules Datasheet: UJ3D1210TS Rev. C, February 2020 1Maximum Ratings Parameter Symbol Test Conditions Value Units V DC blocking voltage 1200 V R Repetitive peak reverse voltage, T =25C V 1200 V J RRM Surge peak reverse voltage V 1200 V RSM T = 157C Maximum DC forward current I 10 A C F T = 25C, t = 10ms Non-repetitive forward surge current 120 C p I A FSM sine halfwave T = 110C, t = 10ms 110 C p T = 25C, t = 10ms Repetitive forward surge current 54.2 C p I A FRM sine halfwave, D=0.1 T = 110C, t = 10ms 32.3 C p T = 25C, t = 10ms 720 C p I Non-repetitive peak forward current A F,max T = 110C, t = 10ms 720 C p T = 25C, t = 10ms 72 C p 2 2 2 i t value i dt A s T = 110C, t = 10ms 60 C p T = 25C 220.6 C P Power dissipation W tot T = 157C 26.5 C Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Soldering temperatures, wavesoldering only T 1.6mm from case for 10s 260 C sold allowed at leads Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.52 0.68 C/W qJC Datasheet: UJ3D1210TS Rev. C, February 2020 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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