Product Information

UF3C065080B7S

UF3C065080B7S electronic component of UnitedSiC

Datasheet
N-Channel 650V 27A (Tc) 136.4W (Tc) Surface Mount D2PAK-7
Manufacturer: UnitedSiC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

800: USD 4.6267 ea
Line Total: USD 3701.36

0 - Global Stock
MOQ: 800  Multiples: 800
Pack Size: 800

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

UF3C065080B7S
UnitedSiC

1 : USD 7.1032
10 : USD 6.1606
100 : USD 5.1007

0 - WHS 2


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

UF3C065080B7S
UnitedSiC

1 : USD 7.1032
10 : USD 6.1606
100 : USD 5.1007

0 - WHS 3


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 800
Multiples : 800

Stock Image

UF3C065080B7S
UnitedSiC

800 : USD 4.6267
1600 : USD 4.1731

0 - WHS 4


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

UF3C065080B7S
UnitedSiC

1 : USD 10.3885
10 : USD 9.0202
25 : USD 8.5956

Read More Specifications

     
Manufacturer
Product Category
Package / Case
Packaging
Technology
Series
Part Status
Fet Type
Drain To Source Voltage Vdss
Current - Continuous Drain Id 25 C
Rds On Max Id Vgs
Vgsth Max Id
Gate Charge Qg Max Vgs
Vgs Max
Input Capacitance Ciss Max Vds
Fet Feature
Power Dissipation Max
Operating Temperature
Mounting Type
Supplier Device Package
LoadingGif

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Additional Infomation About Product

650V-85mW SiC FET Rev. A, November 2020 DATASHEET Description This SiC FET device is based on a unique cascode circuit UF3C065080B7S configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction 2 devices. Available in the D PAK-7L package, this device exhibits ultra- low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive. D (Tab) Features Tab w On-resistance R : 85m W (typ) DS(on) w Operating temperature: 175C (max) G (1) w Excellent reverse recovery: Q = 69nC rr 1 w Low body diode V : 1.54V FSD 7 w Low gate charge: Q = 23nC G KS (2) w Threshold voltage V : 4.8V (typ) allowing 0 to 15V drive G(th) S (3-7) w Package creepage and clearance distance > 6.1mm w Kelvin source pin for optimized switching performance w ESD protected, HBM class 2 Part Number Package Marking 2 D PAK-7L UF3C065080B7S UF3C065080B7S Typical applications Any controlled environment such as w Telecom and Server Power w Industrial power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C065080B7S Rev. A, November 2020 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 650 V DS Gate-source voltage V DC -25 to +25 V GS T = 25C 27 A C 1 I Continuous drain current D T = 100C 20 A C 2 T = 25C Pulsed drain current I 65 A C DM 3 L=15mH, I =2.1A E 33 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 136.4 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Reflow soldering temperature T reflow MSL 3 260 C solder 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.83 1.1 C/W qJC Datasheet: UF3C065080B7S Rev. A, November 2020 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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