Product Information

2N7002G-AE2-R

2N7002G-AE2-R electronic component of Unisonic

Datasheet
MOSFET N Trench 60V 300mA 2.5V @ 250uA 7.5 Ω @ 300m,10V SOT-23-3 RoHS
Manufacturer: Unisonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0301 ea
Line Total: USD 0.6

1377 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
36976 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 20
Multiples : 20

Stock Image

2N7002G-AE2-R
Unisonic

20 : USD 0.0263
200 : USD 0.0212
600 : USD 0.0182
3000 : USD 0.015
9000 : USD 0.0135
21000 : USD 0.0127

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

TechThe 2N7002G-AE2-R is a MOSFET transistor from Unisonic Technologies. It is made of a N-channel Trench MOSFET, that has a voltage rating of 60V, and a maximum drain current of 300mA. It has a drain-source break down voltage of 2.5V, and a drain-source On-state resistance of 7.5O at 300mA. This transistor also has a gate-source threshold voltage of 10V and is housed in a SOT-23-3 package type. Finally, this item is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic may also be referenced as

Unisonic Tech
UTC(Unisonic Tech)

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