X-On Electronics has gained recognition as a prominent supplier of OP800C phototransistors across the USA, India, Europe, Australia, and various other global locations. OP800C phototransistors are a product manufactured by TT Electronics. We provide cost-effective solutions for phototransistors, ensuring timely deliveries around the world.

OP800C

OP800C electronic component of TT Electronics
Images are for reference only
See Product Specifications
Part No.OP800C
Manufacturer: TT Electronics
Category:Phototransistors
Description: Phototransistors Photo Transistor
Datasheet: OP800C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.29 ea
Line Total: USD 4.29

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1000
Multiples : 1000
1000 : USD 3.0245

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Maximum On-State Collector Current
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We proudly offer the OP800C Phototransistors at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the OP800C Phototransistors.

Narrow receiving angle Suitable for applications from 400nm to 1100 Variety of sensitivity ranges TO-18 hermetically sealed package Enhanced temperature range Base lead connection The OP800 Series device consist of a NPN silicon phototransistor mounted in a hermetically sealed package. The narrow receiving angle provides excellent on-axis coupling. TO-18 package oeff r high power dissipation and hostile environment operation. The base lead is bonded to enable conventional transistor biasing. Industrial and commercial electronics Distance sensing Harsh environment Photointerrupters Ro HS Collector-Base Voltage 30 V 30 V Collector-Emitter Voltage Emitter -Base Voltage 5 V 5 V Emitter -Collector Voltage Continuous Collector Current 50 mA o o -65 C to +150 C Storage Temperature Range o o Operating Temperature Range -65 C to +125 C (2) Lead Soldering Temperature 1/16 inch (1.6 mm) from case for 5 seconds with soldering iron 260 C (3) Power Dissipation 250 mW Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 2.5 mW/ C above 25 C. 3. Junction temperature maintained at 25 C. 2 4. Light source is a GaAIAs LED, 890 nm peak emission wavelength, providing a 0.5 mW/cm radiant intensity on the unit under test. The intensity level is not necessarily uniform over the lens area of the unit under test.

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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