D2294UK

TetraFET D2294UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA O A GOLD METALLISED B K C MULTI-PURPOSE SILICON DMOS RF FET H 15W 12.5V 500MHz E F J I L SINGLE ENDED G(4 PLS) N FEATURES D M (2 PLS) SIMPLIFIED AMPLIFIER DESIGN SOT 171 PIN 1 SOURCE PIN 2 SOURCE SUITABLE FOR BROAD BAND PIN 3 GATE PIN 4 DRAIN APPLICATIONS PIN 5 SOURCE PIN 6 SOURCE VERY LOW C DIM mm Tol. Inches Tol. rss A 10.92 0.25 0.430 0.001 B 5.84 0.08 0.230 0.003 SIMPLE BIAS CIRCUITS C 2.54 0.08 0.100 0.003 D 3.30 dia 0.13 0.130 dia 0.05 LOW NOISE E 9.14 0.08 0.360 0.003 F 3.05 0.08 0.120 0.003 HIGH GAIN 11 dB MINIMUM G 2.01 0.08 0.079 0.003 H 1.04 0.08 0.041 0.003 I 18.42 0.08 0.725 0.003 J 24.77 0.08 0.975 0.003 APPLICATIONS K 2.74 0.08 0.108 0.003 L 9.14 0.13 0.360 0.005 HF/VHF/UHF COMMUNICATIONS M 4.19 0.08 0.165 0.003 N 0.13 0.05 0.005 0.002 from 1 MHz to 1 GHz O 7.11 MAX 0.280 MAX ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) case P Power Dissipation 50W D BV Drain Source Breakdown Voltage 40V DSS BV Gate Source Breakdown Voltage 20V GSS I Drain Current * 12A D(sat) T Storage Temperature 65 to 150C stg T Maximum Operating Junction Temperature 200C j Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Document Number 2810 E-mail: sales semelab.co.uk Website D2294UK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit DrainSource BV V = 0 I = 10mA 40 V DSS GS D Breakdown Voltage Zero Gate Voltage I V = 12.5V V = 0 1 mA DSS DS GS Drain Current I Gate Leakage Current V = 20V V = 0 6 A GSS GS DS V Gate Threshold Voltage * I = 10mA V = V 17 V GS(th) D DS GS g Forward Transconductance * V = 10V I = 0.6A 1.08 S fs DS D G Common Source Power Gain P = 15W 11 dB PS O Drain Efficiency V = 12.5V I = 0.6A 50 % DS DQ VSWR Load Mismatch Tolerance f = 500MHz 20:1 C Input Capacitance V = 0 V = 5V f = 1MHz 72 pF iss DS GS C Output Capacitance V = 12.5V V = 0 f = 1MHz 60 pF oss DS GS C Reverse Transfer Capacitance V = 12.5V V = 0 f = 1MHz 6 pF rss DS GS * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA R Thermal Resistance Junction Case Max.3.5C / W THjcase Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Document Number 2810 E-mail: sales semelab.co.uk Website