Product Information

TLP597G(F)

TLP597G(F) electronic component of Toshiba

Datasheet
MOSFET Output Optocouplers Photorelay Voff=350V Ion=0.12A

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 50
Multiples : 1

Stock Image

TLP597G(F)
Toshiba

50 : USD 1.2212
100 : USD 1.0249
250 : USD 0.9517
500 : USD 0.9126
1000 : USD 0.8685
2500 : USD 0.8554
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

TLP597G(F)
Toshiba

1 : USD 1.7951
10 : USD 1.6829
25 : USD 1.4957
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

TLP597G(F)
Toshiba

1 : USD 5.2817
10 : USD 1.4995
100 : USD 1.1288
500 : USD 1.0356
1000 : USD 0.9527
2500 : USD 0.9207
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Isolation Voltage
Forward Current
Maximum Operating Temperature
Minimum Operating Temperature
Series
Packaging
Output Type
If - Forward Current
Vf - Forward Voltage
Vr - Reverse Voltage
Package / Case
Brand
Maximum Fall Time
Maximum Forward Diode Voltage
Maximum Input Diode Current
Maximum Reverse Diode Voltage
Maximum Rise Time
Number Of Channels Per Chip
Factory Pack Quantity :
Mounting Style
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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TLP597G TOSHIBA Photocoupler Photo Relay TLP597G Cordless Telephone PBX Unit: mm Modem The TOSHIBA TLP597G consists of an infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package (DIP6). The TLP597G is a bi-directional switch which can replace mechanical relay in many applications. Peak off-state voltage: 350 V (min) Trigger LED current: 3 mA (max) On-state current: 120 mA (max) (A connection) On-state resistance: 35 (max) (A connection) Isolation voltage: 2500 Vrms (min) UL-recognized: UL 1577, File No.E67349 VDE-approved: EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, TOSHIBA 11-7A8S please designate the Option(D4). Weight: 0.4 g (typ.) Pin Configuration (top view) 1 6 1 : Anode 2 : Cathode 3 : NCN.C. 2 5 4 : Drain D1 5 : Source 6 : Drain D2 3 4 Schematic 6 1 5 2 4 Start of commercial production 1995-06 2019 1 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP597G Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I / C -0.5 mA / C F Peak forward current (100 s pulse, 100 pps) I 1 A FP Reverse voltage V 5 V R Input power dissipation PD 50 mW Input power dissipation derating (Ta 25C) PD/C -0.5 mW/C Junction temperature T 125 C j Off-state output terminal voltage V 350 V OFF A connection 120 On-state RMS current B connection I 120 mA ON C connection 160 A connection -1.2 On-state current derating B connection I / C -1.2 mA / C ON (Ta 25C) C connection -1.6 A connection 454 B connection 331 Output power dissipation Po mW C connection 307 A connection Output power dissipation -4.54 B connection -3.31 derating (Ta 25C) Po/C mW/C C connection -3.07 Junction temperature T 125 C j Storage temperature range T -55 to 125 C stg Operating temperature range T -40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 2500 V S rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1): Device considered a two-terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage V 280 V DD Forward current I 5 7.5 25 mA F On-state current I 120 mA ON Operating temperature T -20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-24 Toshiba Electronic Devices & Storage Corporation Detector LED

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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