Product Information

TLP291(E)

TLP291(E) electronic component of Toshiba

Datasheet
Transistor Output Optocouplers Photocoupler 80V 50mA 3750Vrms

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.755 ea
Line Total: USD 0.76

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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TLP291(E)
Toshiba

1 : USD 0.755

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rise Time
Current Transfer Ratio
Fall Time
Output Type
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
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TLP291 TOSHIBA PHOTOCOUPLER IRED & PHOTO-TRANSISTOR TLP291 Power Supplies Unit: mm Programmable Controllers Hybrid ICs TLP291 consists of photo transistor, optically coupled to an infrared emitting diode. TLP291 is housed in the SO4 package, very small and thin coupler. Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 C) and high isolation voltage (3750Vrms), its suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers. Collector-Emitter Voltage : 80 V (min) Current Transfer Ratio : 50% (min) Rank GB : 100% (min) Isolation Voltage : 3750 Vrms (min) TOSHIBA 11-3C1 Weight: 0.05 g (typ.) Operation temperature : -55 to 110 C UL-recognized : UL 1577, File No.E67349 cUL-recognized : CSA Component Acceptance Service No.5A Pin Configuration File No.67349 VDE-approved : EN 60747-5-5, EN 62368-1 (Note 1) TLP291 CQC-approved : GB4943.1, GB8898 Japan and Thailand Factory 1 4 2 3 Note 1: When a VDE approved type is needed, 1:ANODE please designate the Option(V4). 2:CATHODE 3:EMITTER 4:COLLECTOR Construction Mechanical Rating Creepage distance: 5.0 mm (min) Clearance: 5.0 mm (min) Insulation thickness: 0.4 mm (min) Start of commercial production 2012-02 2019 1 2019-5-27 Toshiba Electronic Devices & Storage Corporation TLP291 Current Transfer Ratio (CTR) Rank ( Unless otherwise specified, Ta = 25C) Current Transfer Ratio (%) (I / I ) C F Classification TYPE Marking of Classification I = 5 mA, V = 5 V, Ta = 25C (Note1) F CE Min Max Blank 50 400 Blank, YE, Y+, GR, GB, G, G+,B Rank Y 50 150 YE Rank GR 100 300 GR Rank GB 100 400 GB TLP291 Rank YH 75 150 Y+ Rank GRL 100 200 G Rank GRH 150 300 G+ Rank BLL 200 400 B Note1: Specify both the part number and a rank in this format when ordering (e.g.) rank GB: TLP291 (GB,E For safety standard certification, however, specify the part number alone. (e.g.)TLP291 (GB,E: TLP291 2019 2 2019-5-27 Toshiba Electronic Devices & Storage Corporation

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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