Product Information

TLP2767(E

TLP2767(E electronic component of Toshiba

Datasheet
High Speed Optocouplers Photo-IC 2.7 to 5.5V 3750Vrms 2.5mA 50Mb
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.182 ea
Line Total: USD 7.18

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

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TLP2767(E
Toshiba

1 : USD 7.182
10 : USD 1.9332
100 : USD 1.4796
500 : USD 1.3284
1000 : USD 1.1772

Read More Specifications

     
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RoHS - XON
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Maximum Operating Temperature
Minimum Operating Temperature
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Packaging
Number of Channels
Output Type
Isolation Voltage
Vf - Forward Voltage
If - Forward Current
Vr - Reverse Voltage
Pd - Power Dissipation
Output Current
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Additional Infomation About Product

TLP2767 Photocouplers GaAAs Infrared LED & Photo IC TLP2767TLP2767TLP2767TLP2767 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Factory Networking High-Speed Digital Interfacing for Instrumentation and Control Devices I/O Interface Boards 2. 2. 2. 2. GeneralGeneralGeneralGeneral The TLP2767 is 50-Mbps high speed photocoupler in SO6L package. The TLP2767 consists of high-output GaAAs light-emitting diode coupled with integrated high gain, high speed photodetector, and has high speed switching performance at operation temperature from -40 to 125 and at supply voltage from 2.7 V to 5.5 V. The detector has a totem-pole output stage with current sourcing and sinking capabilities. The TLP2767 has an internal Faraday shield that provides a guaranteed common-mode transient immunity of 25 kV/s. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Package: SO6L (2) Data transfer rate: 50 MBd (typ.) (NRZ) (3) Threshold input current: 4.0 mA (max) (4) Supply voltage: 2.7 to 5.5 V (5) Operating temperature: -40 to 125 (6) Propagation delay time: 20 ns (max) (7) Pulse width distortion: 8 ns (max) (8) Isolation voltage: 5000 Vrms (min) (9) Safety standards UL-approved UL1577 File No.E67349 cUL-approved CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: Option (D4) EN60747-5-5 (approval pending) (Note 1)(Note 1)(Note 1) Option (D4) Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (D4)Option (D4)Option (D4). Start of commercial production 2016-05 2016 Toshiba Corporation 2016-04-22 1 Rev.1.0TLP2767 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 2: N.C. 3: Cathode 4: GND 5: V (Output) O 6: V DD 11-4N1A 5. 5. 5. 5. Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note) Note: A 0.1-F bypass capacitor must be connected between pin 6 and pin 4. 6. 6. 6. 6. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 6.1. Truth Table 6.1. 6.1. 6.1. Truth TableTruth TableTruth Table Input LED Output H ON L L OFF H 6.2. 6.2. 6.2. 6.2. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Dimension(Min) Unit Creepage distances 8.0 mm Clearance distances 8.0 Internal isolation thickness 0.4 2016 Toshiba Corporation 2016-04-22 2 Rev.1.0

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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