Product Information

TLP197G(F)

TLP197G(F) electronic component of Toshiba

Datasheet
Relay SSR 50mA 1.3V DC-IN 0.12A 350V AC/DC-OUT 6-Pin SOP

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.1855 ea
Line Total: USD 3.19

96 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
96 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

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TLP197G(F)
Toshiba

1 : USD 3.1855
10 : USD 2.1735
75 : USD 1.7595
300 : USD 1.7135
525 : USD 1.587
1050 : USD 1.4145
5025 : USD 1.38
10050 : USD 1.3685

145 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 9
Multiples : 1

Stock Image

TLP197G(F)
Toshiba

9 : USD 4.0884
19 : USD 1.9854
50 : USD 1.7681
150 : USD 1.5313

874 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 37
Multiples : 1

Stock Image

TLP197G(F)
Toshiba

37 : USD 2.3393
50 : USD 2.2756
100 : USD 2.2301

     
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RoHS - XON
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TLP197G TOSHIBA Photocoupler IRED & Photo-MOS FET TLP197G Modem Unit: mm Fax PBX Measurement Instrumentation The TOSHIBA mini flat photo relay TLP197G is a small outline photo relay, suitable for surface mount assembly. The TLP197G consists of an infrared emitting diode optically coupled to a photo MOS FET in a six lead 2.1mm height package, which enable TLP197G to be applied in card modems. The TLP197G is a bi directional switch which can replace mechanical relays in fax machines and modems etc. SOP 6pin(2.54SOP6): 1 form A Peak offstate voltage: 350 V (min) Trigger LED current: 3 mA (max) On state current: 120 mA (max) (A connection) On state resistance: 35 (max) TOSHIBA 11-7C1 Isolation voltage: 1500 Vrms (min) Weight: 0.13g (typ.) UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5 (Note 1) Note 1 : When a VDE approved type is needed, please designate the Option(V4). Pin Configuration (top view) Schematic 1 1 : Anode 6 6 1 2 : Cathode 3 : NC 2 5 5 4 : Drain D1 2 5 : Source 3 4 4 6 : Drain D2 Start of commercial production 1996-03 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP197G Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C 0.5 mA/C F Pulse forward current (100s pulse,100pps) I 1 A FP Reverse voltage V 5 V R P 50 mW Diode power dissipation D P /C -0.5 mW/C Diode power dissipation derating (Ta >25C) D Junction temperature T 125 C j Off state output terminal voltage V 350 V OFF A connection B connection Onstate current I 120 mA ON C connection A connection Onstate current derating (Ta 25C) B connection I /C 1.2 mA/C ON C connection A connection Output power dissipation P 300 mW B connection O C connection A connection Output power dissipation derating P /C -3.0 mW /C B connection O (Ta 25C) C connection Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature(10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: Pins1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage V 280 V CC Forward current I 5 7.5 25 mA F Onstate current(A connection) I 100 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation Detector Led

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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