Product Information

TLP200D(TP,F)

TLP200D(TP,F) electronic component of Toshiba

Datasheet
Relay SSR 50mA 1.3V DC-IN 0.2A 200V 8-Pin SOP T/R

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 2.2292 ea
Line Total: USD 5573

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 2500
Multiples : 2500
2500 : USD 2.4455

     
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TLP200D TOSHIBA Photocoupler GaAs IRED & Photo-MOS FET TLP200D PBX Unit: mm Modem Fax Card Measurement Instrument The TOSHIBA TLP200D consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in an 8-pin SOP. The TLP200D is a 2-form-A switch which is suitable for replacement of mechanical relays in many applications which require space savings. SOP 8 pin (2.54SOP8): 2-form-A Peak off-state voltage: 200 V (min) Trigger LED current: 3 mA (max) On-state current: 200 mA (max) On-state resistance: 8 (max) Isolation voltage: 1500 Vrms (min) UL recognized: UL1577, file No. E67349 Pin Configurations (top view) JEDEC JEITA TOSHIBA 1 8 Weight: 0.2 g (typ.) 2 7 1, 3: Anode 2, 4: Cathode 3 6 5: Drain D1 6: Drain D2 7: Drain D3 4 5 8: Drain D4 Schematic 2-form-A 1, 3 6, 8 87 65 2, 4 5, 7 12 34 1 2007-10-01 TLP200D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating I /C 0.5 mA/C F (Ta 25C) LED Pulse forward current I 1 A FP (100 s pulse, 100 pps) Reverse voltage V 5 V R Junction temperature T 125 C j Off-state output terminal voltage V 200 V OFF On-state current I 200 mA ON Detector On-state RMS current derating I /C 2.0 mA/C ON (Ta 25C) Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 1 min., R.H. 60%) BV 1500 Vrms S (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. Note 2: Two channels operating simultaneously. Recommended Operating Conditions Characteristics Symbol MinTyp.MaxUnit Supply voltage V 150 200 V DD Forward current I 5 7.5 25 mA F On-state current I 130 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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