Product Information

TK56A12N1,S4X(S

TK56A12N1,S4X(S electronic component of Toshiba

Datasheet
Trans MOSFET N-CH 120V 112A 3-Pin(3+Tab) TO-220SIS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 4.1898 ea
Line Total: USD 41.9

48 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 10  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
378 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 22
Multiples : 1
22 : USD 1.8687
50 : USD 1.69
100 : USD 1.3877
200 : USD 1.2984

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Channel Mode
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Gate-Source Voltage Max
Package Type
Drain-Source On-Volt
Number Of Elements
LoadingGif

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Additional Infomation About Product

TK56A12N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK56A12N1TK56A12N1TK56A12N1TK56A12N1 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 6.2 m (typ.) (V = 10 V) DS(ON) GS (2) Low leakage current: I = 10 A (max) (V = 120 V) DSS DS (3) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1.0 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 120 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 112 A D Drain current (DC) (T = 25) (Note 1) I 56 c D Drain current (pulsed) (t = 1 ms) (Note 1) I 210 DP Power dissipation (T = 25) P 45 W c D Single-pulse avalanche energy (Note 3) E 110 mJ AS Avalanche current I 56 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-11 2014-02-13 1 Rev.2.0TK56A12N1 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 2.77 /W th(ch-c) Channel-to-ambient thermal resistance R 62.5 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Package limit is 100 A. Note 3: V = 80 V, T = 25 (initial), L = 34.4 H, I = 56 A DD ch AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-13 2 Rev.2.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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