Product Information

TK100E10N1,S1X(S

TK100E10N1,S1X(S electronic component of Toshiba

Datasheet
Transistor: N-MOSFET; unipolar; 100V; 100A; 255W; TO220AB

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6961 ea
Line Total: USD 1.7

220 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
220 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 1.6961
10 : USD 1.4322
50 : USD 1.1985
100 : USD 1.0354
500 : USD 0.963
1000 : USD 0.9307

479 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 2.795
3 : USD 2.509
9 : USD 1.924
24 : USD 1.82

48 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 16
Multiples : 1
16 : USD 2.665
50 : USD 2.4537

27305 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 50
Multiples : 50
50 : USD 2.1466
1000 : USD 1.9218
2000 : USD 1.9023
2500 : USD 1.5954
3000 : USD 1.5788
5000 : USD 1.5133
10000 : USD 1.4976

     
Manufacturer
Product Category
Mounting
Case
Kind Of Package
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Gate Charge
Power Dissipation
LoadingGif

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The TK100E10N1, S1X(S) is a unipolar, N-channel MOSFET transistor manufactured by Toshiba. It is designed for a wide range of power switching applications and contains a metal-oxide-semiconductor field-effect transistor with an integral source terminal and drain terminal designed for operation up to 100 volts and a drain current of 100 amperes. The maximum power dissipation is 255 watts and the device is packaged in the TO220AB outline package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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