Product Information

TCR2DG15,LF

TCR2DG15,LF electronic component of Toshiba

Datasheet
LDO Voltage Regulators CMOS Low Drop-Out Regulator SNG output

Manufacturer: Toshiba
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Price (USD)

1: USD 1.7762 ea
Line Total: USD 1.78

0 - Global Stock
MOQ: 1  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3000
Multiples : 3000

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TCR2DG15,LF
Toshiba

3000 : USD 0.1555

0 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

TCR2DG15,LF
Toshiba

1 : USD 0.564
10 : USD 0.4527
100 : USD 0.258
500 : USD 0.2168
1000 : USD 0.1696
3000 : USD 0.1384
9000 : USD 0.1314
24000 : USD 0.1244
45000 : USD 0.1244

     
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TCR2DG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2DG series Low Noise 200 mA CMOS Low Drop-Out Regulator in ultra small package The TCR2DG series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low quiescent bias current and fast load transient response. These voltage regulators are available in fixed output voltages between 1.2 V and 3.6 V and capable of driving up to 200 mA. They feature overcurrent protection and thermal shut down function. The TCR2DG series is offered in the ultra small package WCSP4 ( 0.79 mm x 0.79 mm x 0.5 mm). It has a low dropout voltage of 75 mV ( 2.5 V output, I = 100 mA) with low output noise voltage of 18 OUT V (2.5 V output) and a load transient response of only rms WCSP4 V = 65 mV ( I = 1 mA150 mA, C =1.0 F). OUT OUT OUT Weight : 0.7 mg (typ.) As small ceramic input and output capacitors can be used with the TCR2DG series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. Features Low Drop-out Voltage ( V -V = 75 mV (typ.) at 2.5 V-output, I = 100 mA ) IN OUT OUT Low quiescent bias current ( I = 45 A (typ.) at I = 0 mA ) B OUT Low stand-by current ( I = 0.1 A (typ.) at Stand-by mode ) B(OFF) Low output noise voltage V = 22 V (typ.) at 3.0 V-output, I = 10 mA, 10 Hz < f < 100 kHz NO rms OUT V = 18 V (typ.) at 2.5 V-output, I = 10 mA, 10 Hz < f < 100 kHz NO rms OUT V = 14 V (typ.) at 1.2 V-output, I = 10 mA, 10 Hz < f < 100 kHz NO rms OUT High ripple rejection ratio R.R = 75 dB (typ.) at 2.5 V-output, I = 10 mA, f =1kHz OUT R.R = 62 dB (typ.) at 2.5 V-output, I = 10 mA, f =10kHz OUT R.R = 50 dB (typ.) at 2.5 V-output, I = 10 mA, f =100kHz OUT Fast load transient response (V = 65 mV (typ.) at I = 1mA 150 mA, C =1.0 F ) OUT OUT OUT Output voltage accuracy 1.0 % Over current protection Thermal shut down function Built-in inrush current reduction circuit Pull down connection between CONTROL and GND Ceramic capacitors can be used ( C = 0.47F, C =1.0 F ) IN OUT Ultra small package, WCSP4 ( 0.79 mm x 0.79 mm x 0.50 mm ) Pin Assignment (top view) CONTROL V IN (A2) (B2) Start of commercial production V GND OUT 2013-01 (B1) (A1) 1 2014-03-01 TCR2DG series = Absolute Maximum Ratings (Ta 25C) Characteristics Symbol Rating Unit Input voltage V 6.0 V IN Control voltage V -0.3 to 6.0 V CT Output voltage V -0.3 to V + 0.3 V OUT IN Output current I 200 mA OUT Power dissipation P 800 (Note1) mW D Operation temperature range T 40 to 85 C opr Junction temperature T 150 C j Storage temperature range T 55 to150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.8mm, both sides of board Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 28 2 2014-03-01

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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