TCR13AGADJ TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR13AGADJ 1.3 A CMOS Ultra Low Dropout Regulator The TCR13AGADJ is CMOS single output voltage regulator with an on/off control input, featuring ultra low dropout voltage, low inrush current and fast load transient response. This voltage regulator is available in output voltage adjustable type from 0.55 V to 3.6 V and capable of driving up to 1.3 A. Other features include overcurrent protection, thermal shutdown, inrush current reduction, under voltage lockout and auto-discharge. The TCR13AGADJ is offered in the ultra small package WCSP6F (0.8 WCSP6F mm x 1.2 mm (typ.), t: 0.33 mm (max)) As small ceramic input and output capacitors can be used with the Weight : 0.61 mg ( typ.) TCR13AGADJ, this device is ideal for portable applications that require high-density board assembly such as cellular phones. Features Low dropout voltage V = 92 mV (typ.) at 0.9 V output, V = 3.3 V, I = 1.0 A DO BIAS OUT V = 9.2 mV (typ.) at 0.9 V output, V = 3.3 V, I = 0.1 A DO BIAS OUT Wide range output voltage (Adjustable from 0.55 V to 3.6 V) Fast load transient response -100 / +115 mV (typ.) at 0.01 A1 A, C 4.7 F OUT Overcurrent protection Thermal shutdown Inrush current reduction Under voltage lockout Soft start function Auto-discharge Pull down connection between CONTROL and GND Ultra small package WCSP6F (0.8 mm x 1.2 mm (typ.), t: 0.33 mm (max)) Stable with over 4.7 F Input capacitor, 1.0 F Bias capacitor and 4.7 F output ceramic capacitor Notice This device is sensitive to electrostatic discharge. Please ensure equipment, operator and tools are adequately earthed when handling. Start of commercial production 2016-11 2017 - 2018 2018-10-10 1 Toshiba Electronic Devices & Storage Corporation TCR13AGADJ Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Bias voltage V 6.0 V BIAS Input voltage V 6.0 V IN Control voltage VCT -0.3 to 6.0 V Adjustable voltage V -0.3 to 6.0 V ADJ Output voltage V -0.3 to V + 0.3 6.0 V OUT IN Power dissipation P 1.9 (Note 1) W D Junction temperature T 150 C j Storage temperature range Tstg -55 to 150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Rating at mounting on a board (Glass epoxy board (FR4) dimension: 40 mm x 40 mm (4 layer), t = 1.8 mm Metal pattern ratio: approximately 70 % each layer) Operating Ranges Characteristics Symbol Rating Unit V 1.1 V, I = 1 mA 2.5 to 5.5 OUT OUT Bias voltage V V BIAS V > 1.1 V, I = 1 mA V + 1.4 V to 5.5 OUT OUT OUT Input voltage V V + 0.1 V to V (Note 2) V IN OUT BIAS Control voltage V -0.3 to V V CT BIAS Output voltage V 0.55 to 3.6 (Note 3) V OUT Output current I 1. 3 (Max) (Note 4) A OUT Operation Temperature T -40 to 85 C opr COUT C 4.7F OUT CIN C 4.7F IN CBIAS C 1.0F BIAS Note 2: I = 1 mA. OUT Please refer to Dropout voltage vs. Output current(Page 12), and use it within Absolute Maximum Ratings Junction temperature and Operation Temperature Ranges. Note 3: Output voltage adjustable type. Please refer to Application Note (Page 7). Note 4: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. Maximum output current of operating ranges table is defined as lifetime average junction temperature of +45 where maximum output current = lifetime average current to avoid electro migration. 2017 - 2018 2018-10-10 2 Toshiba Electronic Devices & Storage Corporation