Product Information

RN1606(TE85L,F)

RN1606(TE85L,F) electronic component of Toshiba

Datasheet
Transistors Switching - Resistor Biased Gen Trans NPN x 2 SM6, 50V, 100A
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.616 ea
Line Total: USD 0.62

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 0.4082
10 : USD 0.3001
100 : USD 0.1138
1000 : USD 0.0897
3000 : USD 0.0633
9000 : USD 0.0587

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Maximum Operating Frequency
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Power Dissipation
Factory Pack Quantity :
Collector- Base Voltage Vcbo
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

RN1601 to RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1601, RN1602, RN1603 RN1604, RN1605, RN1606 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in SM6 (super-mini-type with six (6) leads) With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN2601 to RN2606 Equivalent Circuit and Bias Resistor Values Part No. R1 (k ) R2 (k ) SM6 RN1601 4.7 4.7 JEDEC JEITA RN1602 10 10 TOSHIBA 2-3N1A RN1603 22 22 Weight: 15mg (typ.) RN1604 47 47 RN1605 2.2 47 RN1606 4.7 47 Start of commercial production 1988-11 1 2019 2019-11-13 Toshiba Electronic Devices & Storage Corporation RN1601 to RN1606 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1601 to 1606 Collector-emitter voltage V 50 V CEO RN1601 to 1604 10 Emitter-base voltage V V EBO RN1605, 1606 5 Collector current I 100 mA C Collector power dissipation P * 300 mW C RN1601 to 1606 Junction temperature T 150 C j Storage temperature range T 55 to150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating Internal Circuit (Top View) 2 2019 2019-11-13 Toshiba Electronic Devices & Storage Corporation

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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